JPS59169151A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59169151A
JPS59169151A JP4309983A JP4309983A JPS59169151A JP S59169151 A JPS59169151 A JP S59169151A JP 4309983 A JP4309983 A JP 4309983A JP 4309983 A JP4309983 A JP 4309983A JP S59169151 A JPS59169151 A JP S59169151A
Authority
JP
Japan
Prior art keywords
insulating film
film
etching
faster
etching rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4309983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563940B2 (enrdf_load_html_response
Inventor
Riyouichi Hazuki
巴月　良一
Takahiko Moriya
守屋　孝彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4309983A priority Critical patent/JPS59169151A/ja
Publication of JPS59169151A publication Critical patent/JPS59169151A/ja
Publication of JPH0563940B2 publication Critical patent/JPH0563940B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP4309983A 1983-03-17 1983-03-17 半導体装置の製造方法 Granted JPS59169151A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4309983A JPS59169151A (ja) 1983-03-17 1983-03-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4309983A JPS59169151A (ja) 1983-03-17 1983-03-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59169151A true JPS59169151A (ja) 1984-09-25
JPH0563940B2 JPH0563940B2 (enrdf_load_html_response) 1993-09-13

Family

ID=12654385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4309983A Granted JPS59169151A (ja) 1983-03-17 1983-03-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59169151A (enrdf_load_html_response)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212130A (ja) * 1985-07-10 1987-01-21 Sony Corp 半導体装置の製造方法
JPS6267825A (ja) * 1985-09-20 1987-03-27 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体装置の表面を平坦化する方法
JPS62102544A (ja) * 1985-10-28 1987-05-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 多層金属絶縁体構造の形成方法
JPS62176147A (ja) * 1985-10-03 1987-08-01 ビュル　エス．アー． 高密度集積回路の構成要素の相互接続用多層金属配線網の形成法及び本形成法によつて形成される集積回路
JPS62265724A (ja) * 1986-03-27 1987-11-18 ゼネラル・エレクトリツク・カンパニイ 誘電体エツチング停止材を用いたフレ−ムなしのビア開口形成法
JPS63119534A (ja) * 1986-11-08 1988-05-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0276233A (ja) * 1988-09-12 1990-03-15 Hitachi Ltd 半導体集積回路の製造方法
US4966870A (en) * 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
JPH03154331A (ja) * 1989-10-31 1991-07-02 Internatl Business Mach Corp <Ibm> 導電層形成方法
US5141897A (en) * 1990-03-23 1992-08-25 At&T Bell Laboratories Method of making integrated circuit interconnection
US5286674A (en) * 1992-03-02 1994-02-15 Motorola, Inc. Method for forming a via structure and semiconductor device having the same
JPH09115888A (ja) * 1995-10-13 1997-05-02 Nec Corp 半導体装置の製造方法
US5702981A (en) * 1995-09-29 1997-12-30 Maniar; Papu D. Method for forming a via in a semiconductor device
JP2000077526A (ja) * 1998-08-27 2000-03-14 Samsung Electronics Co Ltd 半導体素子のコンタクトホ―ルの形成方法
JP2000294631A (ja) * 1999-04-05 2000-10-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6768898B2 (en) 1998-11-20 2004-07-27 Murata Manufacturing Co., Ltd. Composite high frequency component and mobile communication apparatus including the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Industrial Co Ltd Handotaisochi oyobi sonoseizohoho
JPS5731155A (en) * 1980-07-31 1982-02-19 Fujitsu Ltd Manufacture of semiconductor device
JPS588578A (ja) * 1981-07-08 1983-01-18 Kazutami Saito 便槽水浄化循環装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Industrial Co Ltd Handotaisochi oyobi sonoseizohoho
JPS5731155A (en) * 1980-07-31 1982-02-19 Fujitsu Ltd Manufacture of semiconductor device
JPS588578A (ja) * 1981-07-08 1983-01-18 Kazutami Saito 便槽水浄化循環装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212130A (ja) * 1985-07-10 1987-01-21 Sony Corp 半導体装置の製造方法
JPS6267825A (ja) * 1985-09-20 1987-03-27 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体装置の表面を平坦化する方法
JPS62176147A (ja) * 1985-10-03 1987-08-01 ビュル　エス．アー． 高密度集積回路の構成要素の相互接続用多層金属配線網の形成法及び本形成法によつて形成される集積回路
JPS62102544A (ja) * 1985-10-28 1987-05-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 多層金属絶縁体構造の形成方法
JPS62265724A (ja) * 1986-03-27 1987-11-18 ゼネラル・エレクトリツク・カンパニイ 誘電体エツチング停止材を用いたフレ−ムなしのビア開口形成法
JPS63119534A (ja) * 1986-11-08 1988-05-24 Mitsubishi Electric Corp 半導体装置の製造方法
US4966870A (en) * 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
JPH0276233A (ja) * 1988-09-12 1990-03-15 Hitachi Ltd 半導体集積回路の製造方法
JPH03154331A (ja) * 1989-10-31 1991-07-02 Internatl Business Mach Corp <Ibm> 導電層形成方法
US5141897A (en) * 1990-03-23 1992-08-25 At&T Bell Laboratories Method of making integrated circuit interconnection
US5286674A (en) * 1992-03-02 1994-02-15 Motorola, Inc. Method for forming a via structure and semiconductor device having the same
US5702981A (en) * 1995-09-29 1997-12-30 Maniar; Papu D. Method for forming a via in a semiconductor device
JPH09115888A (ja) * 1995-10-13 1997-05-02 Nec Corp 半導体装置の製造方法
JP2000077526A (ja) * 1998-08-27 2000-03-14 Samsung Electronics Co Ltd 半導体素子のコンタクトホ―ルの形成方法
US6768898B2 (en) 1998-11-20 2004-07-27 Murata Manufacturing Co., Ltd. Composite high frequency component and mobile communication apparatus including the same
JP2000294631A (ja) * 1999-04-05 2000-10-20 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0563940B2 (enrdf_load_html_response) 1993-09-13

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