JPS59155951A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59155951A
JPS59155951A JP58030275A JP3027583A JPS59155951A JP S59155951 A JPS59155951 A JP S59155951A JP 58030275 A JP58030275 A JP 58030275A JP 3027583 A JP3027583 A JP 3027583A JP S59155951 A JPS59155951 A JP S59155951A
Authority
JP
Japan
Prior art keywords
layer
vertical wiring
crystal
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58030275A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526341B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井 潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58030275A priority Critical patent/JPS59155951A/ja
Publication of JPS59155951A publication Critical patent/JPS59155951A/ja
Publication of JPH0526341B2 publication Critical patent/JPH0526341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58030275A 1983-02-25 1983-02-25 半導体装置の製造方法 Granted JPS59155951A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030275A JPS59155951A (ja) 1983-02-25 1983-02-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030275A JPS59155951A (ja) 1983-02-25 1983-02-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59155951A true JPS59155951A (ja) 1984-09-05
JPH0526341B2 JPH0526341B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=12299154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030275A Granted JPS59155951A (ja) 1983-02-25 1983-02-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59155951A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179552A (ja) * 1985-02-05 1986-08-12 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62141738A (ja) * 1985-12-17 1987-06-25 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62190743A (ja) * 1986-02-18 1987-08-20 Agency Of Ind Science & Technol 垂直配線の形成方法
JPS62190744A (ja) * 1986-02-18 1987-08-20 Agency Of Ind Science & Technol 垂直配線構造
US4807021A (en) * 1986-03-10 1989-02-21 Kabushiki Kaisha Toshiba Semiconductor device having stacking structure
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
WO1995019642A1 (de) * 1994-01-14 1995-07-20 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118975A (en) * 1975-03-19 1976-10-19 Hitachi Ltd Photo controll semiconductor unitegrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118975A (en) * 1975-03-19 1976-10-19 Hitachi Ltd Photo controll semiconductor unitegrated circuit device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179552A (ja) * 1985-02-05 1986-08-12 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62141738A (ja) * 1985-12-17 1987-06-25 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS62190743A (ja) * 1986-02-18 1987-08-20 Agency Of Ind Science & Technol 垂直配線の形成方法
JPS62190744A (ja) * 1986-02-18 1987-08-20 Agency Of Ind Science & Technol 垂直配線構造
US4807021A (en) * 1986-03-10 1989-02-21 Kabushiki Kaisha Toshiba Semiconductor device having stacking structure
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
WO1995019642A1 (de) * 1994-01-14 1995-07-20 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung

Also Published As

Publication number Publication date
JPH0526341B2 (enrdf_load_stackoverflow) 1993-04-15

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