JPS59136974A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59136974A
JPS59136974A JP58010731A JP1073183A JPS59136974A JP S59136974 A JPS59136974 A JP S59136974A JP 58010731 A JP58010731 A JP 58010731A JP 1073183 A JP1073183 A JP 1073183A JP S59136974 A JPS59136974 A JP S59136974A
Authority
JP
Japan
Prior art keywords
layer
metal
schottky
barrier
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58010731A
Other languages
English (en)
Japanese (ja)
Other versions
JPH029452B2 (enrdf_load_stackoverflow
Inventor
Yoshito Ogawa
義人 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58010731A priority Critical patent/JPS59136974A/ja
Publication of JPS59136974A publication Critical patent/JPS59136974A/ja
Publication of JPH029452B2 publication Critical patent/JPH029452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58010731A 1983-01-26 1983-01-26 半導体装置 Granted JPS59136974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58010731A JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58010731A JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS59136974A true JPS59136974A (ja) 1984-08-06
JPH029452B2 JPH029452B2 (enrdf_load_stackoverflow) 1990-03-02

Family

ID=11758433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58010731A Granted JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS59136974A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286285A (ja) * 1986-06-04 1987-12-12 Nec Corp マイクロ波用電界効果トランジスタ
US4979003A (en) * 1988-12-20 1990-12-18 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Field effect transistor and process for the production of a field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107273A (en) * 1978-02-09 1979-08-22 Matsushita Electric Ind Co Ltd Production of field effect transistor
JPS5784168A (en) * 1980-11-13 1982-05-26 Sumitomo Electric Ind Ltd Semiconductor device
JPS5852876A (ja) * 1981-09-24 1983-03-29 Toshiba Corp 砒化ガリウム半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107273A (en) * 1978-02-09 1979-08-22 Matsushita Electric Ind Co Ltd Production of field effect transistor
JPS5784168A (en) * 1980-11-13 1982-05-26 Sumitomo Electric Ind Ltd Semiconductor device
JPS5852876A (ja) * 1981-09-24 1983-03-29 Toshiba Corp 砒化ガリウム半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286285A (ja) * 1986-06-04 1987-12-12 Nec Corp マイクロ波用電界効果トランジスタ
US4979003A (en) * 1988-12-20 1990-12-18 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Field effect transistor and process for the production of a field effect transistor

Also Published As

Publication number Publication date
JPH029452B2 (enrdf_load_stackoverflow) 1990-03-02

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