JPH029452B2 - - Google Patents

Info

Publication number
JPH029452B2
JPH029452B2 JP58010731A JP1073183A JPH029452B2 JP H029452 B2 JPH029452 B2 JP H029452B2 JP 58010731 A JP58010731 A JP 58010731A JP 1073183 A JP1073183 A JP 1073183A JP H029452 B2 JPH029452 B2 JP H029452B2
Authority
JP
Japan
Prior art keywords
layer
metal
shot
barrier
multilayer electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58010731A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59136974A (ja
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58010731A priority Critical patent/JPS59136974A/ja
Publication of JPS59136974A publication Critical patent/JPS59136974A/ja
Publication of JPH029452B2 publication Critical patent/JPH029452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58010731A 1983-01-26 1983-01-26 半導体装置 Granted JPS59136974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58010731A JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58010731A JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS59136974A JPS59136974A (ja) 1984-08-06
JPH029452B2 true JPH029452B2 (enrdf_load_stackoverflow) 1990-03-02

Family

ID=11758433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58010731A Granted JPS59136974A (ja) 1983-01-26 1983-01-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS59136974A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286285A (ja) * 1986-06-04 1987-12-12 Nec Corp マイクロ波用電界効果トランジスタ
DE3842863A1 (de) * 1988-12-20 1990-06-21 Fraunhofer Ges Forschung Feldeffekttransistor und verfahren zum herstellen eines feldeffekttransistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107273A (en) * 1978-02-09 1979-08-22 Matsushita Electric Ind Co Ltd Production of field effect transistor
JPS5784168A (en) * 1980-11-13 1982-05-26 Sumitomo Electric Ind Ltd Semiconductor device
JPS5852876A (ja) * 1981-09-24 1983-03-29 Toshiba Corp 砒化ガリウム半導体装置

Also Published As

Publication number Publication date
JPS59136974A (ja) 1984-08-06

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