JPH0546106B2 - - Google Patents

Info

Publication number
JPH0546106B2
JPH0546106B2 JP57072428A JP7242882A JPH0546106B2 JP H0546106 B2 JPH0546106 B2 JP H0546106B2 JP 57072428 A JP57072428 A JP 57072428A JP 7242882 A JP7242882 A JP 7242882A JP H0546106 B2 JPH0546106 B2 JP H0546106B2
Authority
JP
Japan
Prior art keywords
film
electrode
tft
amorphous silicon
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57072428A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58190061A (ja
Inventor
Toshio Aoki
Mitsushi Ikeda
Koji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57072428A priority Critical patent/JPS58190061A/ja
Publication of JPS58190061A publication Critical patent/JPS58190061A/ja
Publication of JPH0546106B2 publication Critical patent/JPH0546106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57072428A 1982-04-28 1982-04-28 アモルファスシリコン半導体装置 Granted JPS58190061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57072428A JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57072428A JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Publications (2)

Publication Number Publication Date
JPS58190061A JPS58190061A (ja) 1983-11-05
JPH0546106B2 true JPH0546106B2 (enrdf_load_stackoverflow) 1993-07-13

Family

ID=13489004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57072428A Granted JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Country Status (1)

Country Link
JP (1) JPS58190061A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968975A (ja) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS59124162A (ja) * 1982-12-29 1984-07-18 Sharp Corp 薄膜トランジスタ
JPS6014473A (ja) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd 薄膜トランジスタの電極構造
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
JPS61193485A (ja) * 1985-02-22 1986-08-27 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイの製造方法
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
JPS6292371A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
US5188974A (en) * 1987-10-31 1993-02-23 Canon Kabushiki Kaisha Method of manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137150B2 (enrdf_load_stackoverflow) * 1971-12-20 1976-10-14
JPS581542B2 (ja) * 1974-03-20 1983-01-11 沖電気工業株式会社 半導体集積回路の製造方法
JPS51147290A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS5687364A (en) * 1979-12-18 1981-07-15 Nec Corp Semiconductor device
JPS5833700B2 (ja) * 1980-03-28 1983-07-21 義栄 長谷川 固定プロ−ブ・ボ−ド

Also Published As

Publication number Publication date
JPS58190061A (ja) 1983-11-05

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