JPS59125638A - 半導体素子分離の製造方法 - Google Patents

半導体素子分離の製造方法

Info

Publication number
JPS59125638A
JPS59125638A JP58000314A JP31483A JPS59125638A JP S59125638 A JPS59125638 A JP S59125638A JP 58000314 A JP58000314 A JP 58000314A JP 31483 A JP31483 A JP 31483A JP S59125638 A JPS59125638 A JP S59125638A
Authority
JP
Japan
Prior art keywords
film
silicon
oxide film
groove
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58000314A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351537B2 (cg-RX-API-DMAC10.html
Inventor
Keimei Mikoshiba
御子柴　啓明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58000314A priority Critical patent/JPS59125638A/ja
Publication of JPS59125638A publication Critical patent/JPS59125638A/ja
Publication of JPS6351537B2 publication Critical patent/JPS6351537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0143—
    • H10W10/17—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP58000314A 1983-01-05 1983-01-05 半導体素子分離の製造方法 Granted JPS59125638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58000314A JPS59125638A (ja) 1983-01-05 1983-01-05 半導体素子分離の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58000314A JPS59125638A (ja) 1983-01-05 1983-01-05 半導体素子分離の製造方法

Publications (2)

Publication Number Publication Date
JPS59125638A true JPS59125638A (ja) 1984-07-20
JPS6351537B2 JPS6351537B2 (cg-RX-API-DMAC10.html) 1988-10-14

Family

ID=11470446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58000314A Granted JPS59125638A (ja) 1983-01-05 1983-01-05 半導体素子分離の製造方法

Country Status (1)

Country Link
JP (1) JPS59125638A (cg-RX-API-DMAC10.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340337A (ja) * 1986-07-07 1988-02-20 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路分離法
US4892614A (en) * 1986-07-07 1990-01-09 Texas Instruments Incorporated Integrated circuit isolation process
JPH09153542A (ja) * 1995-11-30 1997-06-10 Nec Corp 半導体装置の製造方法
KR100329606B1 (ko) * 1995-06-02 2002-10-25 주식회사 하이닉스반도체 반도체소자의소자분리절연막형성방법
KR100361762B1 (ko) * 1995-11-06 2003-02-11 주식회사 하이닉스반도체 반도체소자의소자분리방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02179246A (ja) * 1988-12-28 1990-07-12 Fanuc Ltd ビルトインモータのステータ構造
JPH0617345U (ja) * 1992-07-22 1994-03-04 東洋電機製造株式会社 フレーム無しの交流機の固定子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340337A (ja) * 1986-07-07 1988-02-20 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路分離法
US4892614A (en) * 1986-07-07 1990-01-09 Texas Instruments Incorporated Integrated circuit isolation process
KR100329606B1 (ko) * 1995-06-02 2002-10-25 주식회사 하이닉스반도체 반도체소자의소자분리절연막형성방법
KR100361762B1 (ko) * 1995-11-06 2003-02-11 주식회사 하이닉스반도체 반도체소자의소자분리방법
JPH09153542A (ja) * 1995-11-30 1997-06-10 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6351537B2 (cg-RX-API-DMAC10.html) 1988-10-14

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