JPS5910073B2 - シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 - Google Patents
シリコン・ゲ−トｍｏｓ型半導体装置の製造方法Info
- Publication number
- JPS5910073B2 JPS5910073B2 JP47107222A JP10722272A JPS5910073B2 JP S5910073 B2 JPS5910073 B2 JP S5910073B2 JP 47107222 A JP47107222 A JP 47107222A JP 10722272 A JP10722272 A JP 10722272A JP S5910073 B2 JPS5910073 B2 JP S5910073B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- oxide film
- layer
- insulating film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 title claims description 13
- 239000010703 silicon Substances 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000012216 screening Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47107222A JPS5910073B2 (ja) | 1972-10-27 | 1972-10-27 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
| FR7335486A FR2204892B1 (US08177716-20120515-C00003.png) | 1972-10-27 | 1973-10-04 | |
| DE19732352331 DE2352331A1 (de) | 1972-10-27 | 1973-10-18 | Verfahren zur herstellung einer mehrschichtigen struktur |
| GB4869573A GB1428713A (en) | 1972-10-27 | 1973-10-18 | Method of manufactruing a semiconductor device |
| IT30438/73A IT998866B (it) | 1972-10-27 | 1973-10-23 | Procedimento per produrre struttu re a piu strati metallo isolatore semiconduttore |
| NLAANVRAGE7314576,A NL179434C (nl) | 1972-10-27 | 1973-10-23 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, omvattende een halfgeleiderlichaam met een door een dunne isolerende laag van het halfgeleiderlichaam gescheiden geleidende stuurelektrode. |
| CA184,345A CA1032659A (en) | 1972-10-27 | 1973-10-26 | Method of producing multi-layer structures |
| US410445A US3906620A (en) | 1972-10-27 | 1973-10-29 | Method of producing multi-layer structure |
| HK301/79A HK30179A (en) | 1972-10-27 | 1979-05-10 | Method of manufacturing a semiconductor device |
| MY36/79A MY7900036A (en) | 1972-10-27 | 1979-12-30 | Method of manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47107222A JPS5910073B2 (ja) | 1972-10-27 | 1972-10-27 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4966074A JPS4966074A (US08177716-20120515-C00003.png) | 1974-06-26 |
| JPS5910073B2 true JPS5910073B2 (ja) | 1984-03-06 |
Family
ID=14453572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47107222A Expired JPS5910073B2 (ja) | 1972-10-27 | 1972-10-27 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
Country Status (10)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2554450A1 (de) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Verfahren zur herstellung einer integrierten schaltung |
| JPS5293278A (en) * | 1976-01-30 | 1977-08-05 | Matsushita Electronics Corp | Manufacture for mos type semiconductor intergrated circuit |
| DE2858815C2 (de) * | 1977-01-26 | 1996-01-18 | Sgs Thomson Microelectronics | Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung |
| US4553314B1 (en) * | 1977-01-26 | 2000-04-18 | Sgs Thomson Microelectronics | Method for making a semiconductor device |
| IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| US4259779A (en) * | 1977-08-24 | 1981-04-07 | Rca Corporation | Method of making radiation resistant MOS transistor |
| US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
| DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
| US4287661A (en) * | 1980-03-26 | 1981-09-08 | International Business Machines Corporation | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
| US4667395A (en) * | 1985-03-29 | 1987-05-26 | International Business Machines Corporation | Method for passivating an undercut in semiconductor device preparation |
| JPH01235254A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 半導体装置及びその製造方法 |
| US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
| US6780718B2 (en) | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
| KR970003837B1 (en) * | 1993-12-16 | 1997-03-22 | Lg Semicon Co Ltd | Fabrication of mosfet |
| JP2001291861A (ja) * | 2000-04-05 | 2001-10-19 | Nec Corp | Ｍｏｓトランジスタ、トランジスタ製造方法 |
| US8435873B2 (en) | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
| KR101163224B1 (ko) * | 2011-02-15 | 2012-07-06 | 에스케이하이닉스 주식회사 | 듀얼 폴리게이트 형성방법 및 이를 이용한 반도체소자의 제조방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112507A (US08177716-20120515-C00003.png) * | 1974-07-22 | 1976-01-31 | Furukawa Electric Co Ltd |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| NL131898C (US08177716-20120515-C00003.png) * | 1965-03-26 | |||
| NL6617141A (US08177716-20120515-C00003.png) * | 1966-02-11 | 1967-08-14 | Siemens Ag | |
| US3764865A (en) * | 1970-03-17 | 1973-10-09 | Rca Corp | Semiconductor devices having closely spaced contacts |
| US3798752A (en) * | 1971-03-11 | 1974-03-26 | Nippon Electric Co | Method of producing a silicon gate insulated-gate field effect transistor |
| CA910506A (en) * | 1971-06-25 | 1972-09-19 | Bell Canada-Northern Electric Research Limited | Modification of channel regions in insulated gate field effect transistors |
| US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
-
1972
- 1972-10-27 JP JP47107222A patent/JPS5910073B2/ja not_active Expired
-
1973
- 1973-10-04 FR FR7335486A patent/FR2204892B1/fr not_active Expired
- 1973-10-18 DE DE19732352331 patent/DE2352331A1/de not_active Withdrawn
- 1973-10-18 GB GB4869573A patent/GB1428713A/en not_active Expired
- 1973-10-23 NL NLAANVRAGE7314576,A patent/NL179434C/xx not_active IP Right Cessation
- 1973-10-23 IT IT30438/73A patent/IT998866B/it active
- 1973-10-26 CA CA184,345A patent/CA1032659A/en not_active Expired
- 1973-10-29 US US410445A patent/US3906620A/en not_active Expired - Lifetime
-
1979
- 1979-05-10 HK HK301/79A patent/HK30179A/xx unknown
- 1979-12-30 MY MY36/79A patent/MY7900036A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112507A (US08177716-20120515-C00003.png) * | 1974-07-22 | 1976-01-31 | Furukawa Electric Co Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| HK30179A (en) | 1979-05-18 |
| IT998866B (it) | 1976-02-20 |
| MY7900036A (en) | 1979-12-31 |
| CA1032659A (en) | 1978-06-06 |
| NL179434B (nl) | 1986-04-01 |
| FR2204892B1 (US08177716-20120515-C00003.png) | 1976-10-01 |
| NL7314576A (US08177716-20120515-C00003.png) | 1974-05-01 |
| GB1428713A (en) | 1976-03-17 |
| DE2352331A1 (de) | 1974-05-16 |
| JPS4966074A (US08177716-20120515-C00003.png) | 1974-06-26 |
| FR2204892A1 (US08177716-20120515-C00003.png) | 1974-05-24 |
| US3906620A (en) | 1975-09-23 |
| NL179434C (nl) | 1986-09-01 |
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