CA910506A - Modification of channel regions in insulated gate field effect transistors - Google Patents

Modification of channel regions in insulated gate field effect transistors

Info

Publication number
CA910506A
CA910506A CA910506A CA910506DA CA910506A CA 910506 A CA910506 A CA 910506A CA 910506 A CA910506 A CA 910506A CA 910506D A CA910506D A CA 910506DA CA 910506 A CA910506 A CA 910506A
Authority
CA
Canada
Prior art keywords
modification
field effect
effect transistors
insulated gate
channel regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA910506A
Inventor
G. Mcquhae Kenneth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Technology Corp
Original Assignee
Bell Canada Northern Electric Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Canada Northern Electric Research Ltd filed Critical Bell Canada Northern Electric Research Ltd
Application granted granted Critical
Publication of CA910506A publication Critical patent/CA910506A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
CA910506A 1971-06-25 1971-06-25 Modification of channel regions in insulated gate field effect transistors Expired CA910506A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA116745 1971-06-25

Publications (1)

Publication Number Publication Date
CA910506A true CA910506A (en) 1972-09-19

Family

ID=4090150

Family Applications (1)

Application Number Title Priority Date Filing Date
CA910506A Expired CA910506A (en) 1971-06-25 1971-06-25 Modification of channel regions in insulated gate field effect transistors

Country Status (1)

Country Link
CA (1) CA910506A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204892A1 (en) * 1972-10-27 1974-05-24 Hitachi Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204892A1 (en) * 1972-10-27 1974-05-24 Hitachi Ltd

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