JPS5893261A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5893261A JPS5893261A JP19217781A JP19217781A JPS5893261A JP S5893261 A JPS5893261 A JP S5893261A JP 19217781 A JP19217781 A JP 19217781A JP 19217781 A JP19217781 A JP 19217781A JP S5893261 A JPS5893261 A JP S5893261A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- insulating film
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 30
- 239000012528 membrane Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 4
- 229910018520 Al—Si Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 210000004907 gland Anatomy 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- DCUFMVPCXCSVNP-UHFFFAOYSA-N methacrylic anhydride Chemical compound CC(=C)C(=O)OC(=O)C(C)=C DCUFMVPCXCSVNP-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19217781A JPS5893261A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19217781A JPS5893261A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893261A true JPS5893261A (ja) | 1983-06-02 |
| JPH0570301B2 JPH0570301B2 (enrdf_load_stackoverflow) | 1993-10-04 |
Family
ID=16286956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19217781A Granted JPS5893261A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893261A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107727A (ja) * | 1984-10-29 | 1986-05-26 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体装置に金属コンタクト・スタツドを形成する方法 |
| JPS61133648A (ja) * | 1984-11-29 | 1986-06-20 | テキサス インスツルメンツ インコーポレイテツド | 半導体装置の製造方法 |
| JPH01137649A (ja) * | 1987-10-31 | 1989-05-30 | Samsung Semiconductor & Teleommun Co Ltd | 半導体装置の平坦化方法 |
| JPH04159755A (ja) * | 1990-10-23 | 1992-06-02 | Nec Kyushu Ltd | 半導体装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4845185A (enrdf_load_stackoverflow) * | 1971-10-11 | 1973-06-28 | ||
| JPS49132987A (enrdf_load_stackoverflow) * | 1973-04-25 | 1974-12-20 | ||
| JPS5236975A (en) * | 1975-09-18 | 1977-03-22 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS56122162A (en) * | 1980-03-03 | 1981-09-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS56126943A (en) * | 1980-03-12 | 1981-10-05 | Fujitsu Ltd | Production of semiconductor device |
-
1981
- 1981-11-30 JP JP19217781A patent/JPS5893261A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4845185A (enrdf_load_stackoverflow) * | 1971-10-11 | 1973-06-28 | ||
| JPS49132987A (enrdf_load_stackoverflow) * | 1973-04-25 | 1974-12-20 | ||
| JPS5236975A (en) * | 1975-09-18 | 1977-03-22 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS56122162A (en) * | 1980-03-03 | 1981-09-25 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS56126943A (en) * | 1980-03-12 | 1981-10-05 | Fujitsu Ltd | Production of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107727A (ja) * | 1984-10-29 | 1986-05-26 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体装置に金属コンタクト・スタツドを形成する方法 |
| JPS61133648A (ja) * | 1984-11-29 | 1986-06-20 | テキサス インスツルメンツ インコーポレイテツド | 半導体装置の製造方法 |
| JPH01137649A (ja) * | 1987-10-31 | 1989-05-30 | Samsung Semiconductor & Teleommun Co Ltd | 半導体装置の平坦化方法 |
| JPH04159755A (ja) * | 1990-10-23 | 1992-06-02 | Nec Kyushu Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0570301B2 (enrdf_load_stackoverflow) | 1993-10-04 |
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