JPS56126943A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS56126943A
JPS56126943A JP3126080A JP3126080A JPS56126943A JP S56126943 A JPS56126943 A JP S56126943A JP 3126080 A JP3126080 A JP 3126080A JP 3126080 A JP3126080 A JP 3126080A JP S56126943 A JPS56126943 A JP S56126943A
Authority
JP
Japan
Prior art keywords
layer
insulator
wiring
wiring layer
clearance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3126080A
Other languages
Japanese (ja)
Other versions
JPS6326544B2 (en
Inventor
Hiroshi Tokunaga
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3126080A priority Critical patent/JPS56126943A/en
Publication of JPS56126943A publication Critical patent/JPS56126943A/en
Publication of JPS6326544B2 publication Critical patent/JPS6326544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To accomplish an interlaminar insulation by stacking the second wiring layer on the first wiring layer after a thermosetting resin is filled into a clearance between the first wiring layer and a surrounding insulator layer, the second layer is covered with an insulator layer and a window etched therethrough. CONSTITUTION:Openings are made on insulator layers 2 and 5 to form the first wiring layer 3'. First, a liquid organosiloxane resin is applied by turning and heated to form a resin film, on which PSG11 is stacked by a low temperature CVD. After a resist mask 13 is applied, an electrode window 14 is provided on the films 11 and 10 and an Al wiring 15 is made after the removal of the mask. With such an arrangement, a clearance between the wiring and the insulator film is fully filled thereby producting an interlaminar insulator film with a flat surface. Thus, a highly reliable and fine multiple interconnection is possible.
JP3126080A 1980-03-12 1980-03-12 Production of semiconductor device Granted JPS56126943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3126080A JPS56126943A (en) 1980-03-12 1980-03-12 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3126080A JPS56126943A (en) 1980-03-12 1980-03-12 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56126943A true JPS56126943A (en) 1981-10-05
JPS6326544B2 JPS6326544B2 (en) 1988-05-30

Family

ID=12326371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3126080A Granted JPS56126943A (en) 1980-03-12 1980-03-12 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126943A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270780A (en) * 1975-12-10 1977-06-13 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270780A (en) * 1975-12-10 1977-06-13 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPH0570301B2 (en) * 1981-11-30 1993-10-04 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6326544B2 (en) 1988-05-30

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