JPS5737862A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5737862A
JPS5737862A JP11334880A JP11334880A JPS5737862A JP S5737862 A JPS5737862 A JP S5737862A JP 11334880 A JP11334880 A JP 11334880A JP 11334880 A JP11334880 A JP 11334880A JP S5737862 A JPS5737862 A JP S5737862A
Authority
JP
Japan
Prior art keywords
layer
resin
al2o3
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11334880A
Other languages
Japanese (ja)
Inventor
Shiro Takeda
Minoru Nakajima
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11334880A priority Critical patent/JPS5737862A/en
Publication of JPS5737862A publication Critical patent/JPS5737862A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3192Multilayer coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain an insulating film having excellent adhesive property by forming an Al2O3 layer between a Si resin layer and a polyimide resin layer. CONSTITUTION:The Al2O3 layer is deposited on the insulating layer in Si resin in 300-5,000Angstrom thickness through sputtering, the protective layer of polymide resin is stacked on the Al2O3 layer and the whole is cured. According to this constitution, the polyimide resin does not exfoliate even when the whole is boiled for approximately five hrs. at 350 deg.C, and the protective film having high reliability is obtained.
JP11334880A 1980-08-20 1980-08-20 Semiconductor device and its manufacture Pending JPS5737862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11334880A JPS5737862A (en) 1980-08-20 1980-08-20 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11334880A JPS5737862A (en) 1980-08-20 1980-08-20 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5737862A true JPS5737862A (en) 1982-03-02

Family

ID=14609969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11334880A Pending JPS5737862A (en) 1980-08-20 1980-08-20 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5737862A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135465A (en) * 1984-07-27 1986-02-19 Konishiroku Photo Ind Co Ltd Electrostatic recording device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135465A (en) * 1984-07-27 1986-02-19 Konishiroku Photo Ind Co Ltd Electrostatic recording device

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