JPS5893255A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5893255A JPS5893255A JP19060881A JP19060881A JPS5893255A JP S5893255 A JPS5893255 A JP S5893255A JP 19060881 A JP19060881 A JP 19060881A JP 19060881 A JP19060881 A JP 19060881A JP S5893255 A JPS5893255 A JP S5893255A
- Authority
- JP
- Japan
- Prior art keywords
- film
- holes
- covered
- opening
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 17
- 230000008018 melting Effects 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19060881A JPS5893255A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19060881A JPS5893255A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893255A true JPS5893255A (ja) | 1983-06-02 |
| JPH0332215B2 JPH0332215B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Family
ID=16260894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19060881A Granted JPS5893255A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893255A (enrdf_load_stackoverflow) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180819A (ja) * | 1984-09-27 | 1986-04-24 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPS61150270A (ja) * | 1984-12-24 | 1986-07-08 | Nec Corp | 半導体集積回路装置及びその製造方法 |
| JPS61168256A (ja) * | 1985-01-21 | 1986-07-29 | Sony Corp | 半導体装置及びその製造方法 |
| JPS61216447A (ja) * | 1985-03-22 | 1986-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6235649A (ja) * | 1985-08-09 | 1987-02-16 | Fujitsu Ltd | 配線層の形成方法 |
| JPS6286818A (ja) * | 1985-10-14 | 1987-04-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62111448A (ja) * | 1985-11-08 | 1987-05-22 | Fujitsu Ltd | スル−ホ−ルの形成方法 |
| JPS62179745A (ja) * | 1986-02-04 | 1987-08-06 | Nec Corp | 半導体装置の製造方法 |
| JPS62204523A (ja) * | 1986-03-04 | 1987-09-09 | Nec Corp | コンタクト電極の形成方法 |
| JPS62206853A (ja) * | 1986-03-07 | 1987-09-11 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
| JPS63260051A (ja) * | 1987-04-16 | 1988-10-27 | Nec Corp | 半導体装置 |
| JPS63269546A (ja) * | 1987-04-27 | 1988-11-07 | Nec Corp | 半導体装置の製造方法 |
| JPH02185024A (ja) * | 1989-01-11 | 1990-07-19 | Rohm Co Ltd | 半導体装置の製造方法 |
| US4985371A (en) * | 1988-12-09 | 1991-01-15 | At&T Bell Laboratories | Process for making integrated-circuit device metallization |
| JPH0684911A (ja) * | 1992-01-23 | 1994-03-25 | Samsung Electron Co Ltd | 半導体装置およびその製造方法 |
-
1981
- 1981-11-30 JP JP19060881A patent/JPS5893255A/ja active Granted
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180819A (ja) * | 1984-09-27 | 1986-04-24 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPS61150270A (ja) * | 1984-12-24 | 1986-07-08 | Nec Corp | 半導体集積回路装置及びその製造方法 |
| JPS61168256A (ja) * | 1985-01-21 | 1986-07-29 | Sony Corp | 半導体装置及びその製造方法 |
| JPS61216447A (ja) * | 1985-03-22 | 1986-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6235649A (ja) * | 1985-08-09 | 1987-02-16 | Fujitsu Ltd | 配線層の形成方法 |
| JPS6286818A (ja) * | 1985-10-14 | 1987-04-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62111448A (ja) * | 1985-11-08 | 1987-05-22 | Fujitsu Ltd | スル−ホ−ルの形成方法 |
| JPS62179745A (ja) * | 1986-02-04 | 1987-08-06 | Nec Corp | 半導体装置の製造方法 |
| JPS62204523A (ja) * | 1986-03-04 | 1987-09-09 | Nec Corp | コンタクト電極の形成方法 |
| JPS62206853A (ja) * | 1986-03-07 | 1987-09-11 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
| JPS63260051A (ja) * | 1987-04-16 | 1988-10-27 | Nec Corp | 半導体装置 |
| JPS63269546A (ja) * | 1987-04-27 | 1988-11-07 | Nec Corp | 半導体装置の製造方法 |
| US4985371A (en) * | 1988-12-09 | 1991-01-15 | At&T Bell Laboratories | Process for making integrated-circuit device metallization |
| JPH02185024A (ja) * | 1989-01-11 | 1990-07-19 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPH0684911A (ja) * | 1992-01-23 | 1994-03-25 | Samsung Electron Co Ltd | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332215B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5470793A (en) | Method of via formation for the multilevel interconnect integrated circuits | |
| JP2604631B2 (ja) | 半導体装置の製造方法 | |
| US20010014525A1 (en) | Process for forming trenches and contacts during the formation of a semiconductor memory device | |
| JPH04174541A (ja) | 半導体集積回路及びその製造方法 | |
| JPS5893255A (ja) | 半導体装置の製造方法 | |
| JPH0563940B2 (enrdf_load_stackoverflow) | ||
| JP3312604B2 (ja) | 半導体装置の製造方法 | |
| JP3102382B2 (ja) | 半導体装置およびその製造方法 | |
| US6831007B2 (en) | Method for forming metal line of Al/Cu structure | |
| US6204096B1 (en) | Method for reducing critical dimension of dual damascene process using spin-on-glass process | |
| JP3274324B2 (ja) | 半導体装置の製造方法 | |
| JP3135052B2 (ja) | 半導体装置及びその製造方法 | |
| KR100352304B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JP3301466B2 (ja) | 半導体装置の製造方法 | |
| JP2728073B2 (ja) | 半導体装置の製造方法 | |
| JPS6379347A (ja) | 半導体装置の製造方法 | |
| JP3099381B2 (ja) | 半導体装置及びその製造方法 | |
| JP2782912B2 (ja) | 半導体装置の製造方法 | |
| JP3331672B2 (ja) | 半導体装置の製造方法 | |
| JPH07147225A (ja) | 半導体装置およびその製造方法 | |
| JP2000133706A (ja) | 半導体装置およびその製造方法 | |
| JPH11265934A (ja) | 接続部の形成方法 | |
| JP2720657B2 (ja) | 半導体装置及びその製造方法 | |
| JP2000216238A (ja) | 半導体装置 | |
| JPH04127425A (ja) | 半導体集積回路の製造方法 |