JPS5892240A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5892240A
JPS5892240A JP56191462A JP19146281A JPS5892240A JP S5892240 A JPS5892240 A JP S5892240A JP 56191462 A JP56191462 A JP 56191462A JP 19146281 A JP19146281 A JP 19146281A JP S5892240 A JPS5892240 A JP S5892240A
Authority
JP
Japan
Prior art keywords
oxide film
polycrystalline silicon
polycrystalline
silicon
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56191462A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249736B2 (enrdf_load_stackoverflow
Inventor
Seiji Ueda
誠二 上田
Ichizo Kamei
亀井　市蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56191462A priority Critical patent/JPS5892240A/ja
Publication of JPS5892240A publication Critical patent/JPS5892240A/ja
Publication of JPS6249736B2 publication Critical patent/JPS6249736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP56191462A 1981-11-27 1981-11-27 半導体装置の製造方法 Granted JPS5892240A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191462A JPS5892240A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191462A JPS5892240A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5892240A true JPS5892240A (ja) 1983-06-01
JPS6249736B2 JPS6249736B2 (enrdf_load_stackoverflow) 1987-10-21

Family

ID=16275041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191462A Granted JPS5892240A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5892240A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134256A (ja) * 1988-11-16 1990-05-23 Casio Comput Co Ltd サーマルヘッドおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134256A (ja) * 1988-11-16 1990-05-23 Casio Comput Co Ltd サーマルヘッドおよびその製造方法

Also Published As

Publication number Publication date
JPS6249736B2 (enrdf_load_stackoverflow) 1987-10-21

Similar Documents

Publication Publication Date Title
EP0383610B1 (en) Manufacturing method of semiconductor device
JPH029122A (ja) ポリシリコンを含む層状体のエッチング方法
JPS6072268A (ja) バイポ−ラ・トランジスタ構造の製造方法
EP0050973B1 (en) Masking process for semiconductor devices using a polymer film
JPH0618213B2 (ja) 半導体装置の製造方法
JP3344786B2 (ja) 半導体メモリセルのキャパシタ電極製造方法
JPS5892240A (ja) 半導体装置の製造方法
JPH03200330A (ja) 半導体装置の製造方法
JPS6320383B2 (enrdf_load_stackoverflow)
JP2707536B2 (ja) 半導体装置の製造方法
JP3323264B2 (ja) 半導体装置の製造方法
JPS5968950A (ja) 半導体装置の製造方法
JPS622654A (ja) 半導体装置およびその製造方法
JP2685448B2 (ja) 半導体装置の製造方法
JPS6161546B2 (enrdf_load_stackoverflow)
JP2778606B2 (ja) 容量素子の製造方法
JPH03157925A (ja) 半導体装置の製造方法
JPS6027187B2 (ja) 半導体装置の製造方法
JPS60217645A (ja) 半導体装置の製造方法
JPH0337740B2 (enrdf_load_stackoverflow)
JPS6125217B2 (enrdf_load_stackoverflow)
JPS5867046A (ja) 半導体装置の製造方法
JPS63177445A (ja) 半導体装置の製造方法
JPH0117256B2 (enrdf_load_stackoverflow)
JPH04208570A (ja) 半導体装置の製造方法