JPS5891662A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5891662A
JPS5891662A JP56190294A JP19029481A JPS5891662A JP S5891662 A JPS5891662 A JP S5891662A JP 56190294 A JP56190294 A JP 56190294A JP 19029481 A JP19029481 A JP 19029481A JP S5891662 A JPS5891662 A JP S5891662A
Authority
JP
Japan
Prior art keywords
blocking material
polyimide
ray blocking
contact angle
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56190294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211508B2 (en:Method
Inventor
Mototaka Kamoshita
鴨志田 元孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56190294A priority Critical patent/JPS5891662A/ja
Publication of JPS5891662A publication Critical patent/JPS5891662A/ja
Publication of JPS6211508B2 publication Critical patent/JPS6211508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP56190294A 1981-11-27 1981-11-27 半導体装置の製造方法 Granted JPS5891662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190294A JPS5891662A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190294A JPS5891662A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5891662A true JPS5891662A (ja) 1983-05-31
JPS6211508B2 JPS6211508B2 (en:Method) 1987-03-12

Family

ID=16255770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190294A Granted JPS5891662A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5891662A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63221630A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体装置
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
JP2005510084A (ja) * 2001-11-23 2005-04-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス、及び集積回路を包む方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776869U (en:Method) * 1980-10-29 1982-05-12
JPS5860545A (ja) * 1981-10-06 1983-04-11 Mitsubishi Electric Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776869U (en:Method) * 1980-10-29 1982-05-12
JPS5860545A (ja) * 1981-10-06 1983-04-11 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
JPS63221630A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体装置
JP2005510084A (ja) * 2001-11-23 2005-04-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス、及び集積回路を包む方法
JP2010147500A (ja) * 2001-11-23 2010-07-01 Taiwan Semiconductor Manufacturing Co Ltd 半導体デバイス

Also Published As

Publication number Publication date
JPS6211508B2 (en:Method) 1987-03-12

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