JP2005510084A - 半導体デバイス、及び集積回路を包む方法 - Google Patents
半導体デバイス、及び集積回路を包む方法 Download PDFInfo
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- JP2005510084A JP2005510084A JP2003546400A JP2003546400A JP2005510084A JP 2005510084 A JP2005510084 A JP 2005510084A JP 2003546400 A JP2003546400 A JP 2003546400A JP 2003546400 A JP2003546400 A JP 2003546400A JP 2005510084 A JP2005510084 A JP 2005510084A
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2924/1025—Semiconducting materials
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
- キャリア及び集積回路を有する半導体デバイスであり、
前記集積回路は、1つ以上の半導体素子と前記半導体素子が接している1つ以上の接続領域とを有し、前記エンベロープにより周囲から絶縁され、前記エンベロープは相互境界面を持つ内部レイヤ及び外部レイヤを有し、
前記キャリアは、前記接続領域が接続手段により接続される導電部分を有する
半導体デバイスにおいて、
前記相互境界面が層間剥離エリアの完全な境界を形成し、完全な境界の形成の結果として、前記層間剥離エリアが前記接続領域から絶縁されることを特徴とする半導体デバイス。 - 前記層間剥離エリア及び前記相互境界面は、前記内部レイヤの表面上に置かれ、前記層間剥離エリアは前記内部レイヤの表面エリア30から70%の間の大きさであることを特徴とする請求項1に記載の半導体デバイス。
- 前記内部レイヤはボンディングパッドが露出したままであることを特徴とする請求項1に記載の半導体デバイス。
- 一定量の硬化される合成樹脂が前記層間剥離エリアに置かれることを特徴とする請求項1に記載の半導体デバイス。
- 前記エンベロープは前記キャリアに又はキャリア上に取り付けられることを特徴とする請求項1に記載の半導体デバイス。
- 前記キャリアはリードフレームであることを特徴とする請求項1に記載の半導体デバイス。
- 相互境界面を持つ内部レイヤ及び外部レイヤを有するエンベロープに集積回路を包む方法であり、
−前記集積回路の表面上に前記内部レイヤを配置するステップ、
−前記内部レイヤの表面を活性化させるステップ、及び
−前記内部レイヤの前記表面上に前記外部レイヤを配置し、これにより前記相互境界面を形成するステップ
を有する方法において、
前記内部レイヤの前記表面はパターンに従って活性化されるのに対し、前記内部レイヤの表面又は表面上にある層間剥離エリアは不活性のままであることを特徴とする方法。 - 前記パターン化された活性化は、前記外部レイヤを配置する前に、一定量の流体材料を与えることにより活性化され、前記量が前記層間剥離エリアを定める請求項7に記載の方法。
- 材料が硬化可能である前記一定量の液体材料は、同じであり、前記内部レイヤの前記表面が活性化される前に与えられるのに対し、同時に前記一定量の材料の表面は活性化されることを特徴とする請求項8に記載の方法。
- 前記活性化はプラズマ処理又はコロナ処理を用いて行うことを特徴とする請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01204504 | 2001-11-23 | ||
PCT/IB2002/004942 WO2003044858A2 (en) | 2001-11-23 | 2002-11-20 | Semiconductor device and method of enveloping an integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010037667A Division JP5220783B2 (ja) | 2001-11-23 | 2010-02-23 | 半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005510084A true JP2005510084A (ja) | 2005-04-14 |
JP4583757B2 JP4583757B2 (ja) | 2010-11-17 |
Family
ID=8181283
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003546400A Expired - Lifetime JP4583757B2 (ja) | 2001-11-23 | 2002-11-20 | 集積回路を包む方法 |
JP2010037667A Expired - Lifetime JP5220783B2 (ja) | 2001-11-23 | 2010-02-23 | 半導体デバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010037667A Expired - Lifetime JP5220783B2 (ja) | 2001-11-23 | 2010-02-23 | 半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US7098545B2 (ja) |
EP (1) | EP1451869B1 (ja) |
JP (2) | JP4583757B2 (ja) |
CN (1) | CN1288750C (ja) |
AU (1) | AU2002351024A1 (ja) |
WO (1) | WO2003044858A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006017115B4 (de) * | 2006-04-10 | 2008-08-28 | Infineon Technologies Ag | Halbleiterbauteil mit einem Kunststoffgehäuse und Verfahren zu seiner Herstellung |
KR100827312B1 (ko) * | 2006-10-02 | 2008-05-06 | 삼성전기주식회사 | 인쇄회로기판의 커버레이 형성방법 |
US7573138B2 (en) * | 2006-11-30 | 2009-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stress decoupling structures for flip-chip assembly |
US7659192B2 (en) * | 2006-12-29 | 2010-02-09 | Intel Corporation | Methods of forming stepped bumps and structures formed thereby |
DE102015102535B4 (de) | 2015-02-23 | 2023-08-03 | Infineon Technologies Ag | Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials |
IL253252B (en) * | 2016-07-28 | 2021-05-31 | Neteera Tech Ltd | Terahertz detector in Simos technology |
CN107887285A (zh) * | 2016-09-30 | 2018-04-06 | 中芯国际集成电路制造(北京)有限公司 | 焊垫结构及其制造方法、及图像传感器 |
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JPS5891662A (ja) * | 1981-11-27 | 1983-05-31 | Nec Corp | 半導体装置の製造方法 |
JPS63151054A (ja) * | 1986-12-16 | 1988-06-23 | Matsushita Electronics Corp | 半導体装置 |
JPH07254665A (ja) * | 1994-03-16 | 1995-10-03 | Asahi Glass Co Ltd | 半導体素子・集積回路装置 |
JPH08153833A (ja) * | 1994-11-29 | 1996-06-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2000150727A (ja) * | 1998-11-09 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
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JPS62185343A (ja) * | 1986-02-08 | 1987-08-13 | Mitsubishi Electric Corp | 樹脂封止形半導体装置 |
US5171716A (en) * | 1986-12-19 | 1992-12-15 | North American Philips Corp. | Method of manufacturing semiconductor device with reduced packaging stress |
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EP0407585A4 (en) * | 1988-07-15 | 1992-06-10 | Toray Silicone Co. Ltd. | Semiconductor device sealed with resin and a method of producing the same |
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JP2891184B2 (ja) * | 1996-06-13 | 1999-05-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
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JP3398004B2 (ja) * | 1997-03-24 | 2003-04-21 | ローム株式会社 | パッケージ型半導体装置の構造 |
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2002
- 2002-11-20 WO PCT/IB2002/004942 patent/WO2003044858A2/en active Application Filing
- 2002-11-20 EP EP02785734A patent/EP1451869B1/en not_active Expired - Lifetime
- 2002-11-20 US US10/496,341 patent/US7098545B2/en not_active Expired - Lifetime
- 2002-11-20 JP JP2003546400A patent/JP4583757B2/ja not_active Expired - Lifetime
- 2002-11-20 AU AU2002351024A patent/AU2002351024A1/en not_active Abandoned
- 2002-11-20 CN CNB028232356A patent/CN1288750C/zh not_active Expired - Lifetime
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2010
- 2010-02-23 JP JP2010037667A patent/JP5220783B2/ja not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891662A (ja) * | 1981-11-27 | 1983-05-31 | Nec Corp | 半導体装置の製造方法 |
JPS63151054A (ja) * | 1986-12-16 | 1988-06-23 | Matsushita Electronics Corp | 半導体装置 |
JPH07254665A (ja) * | 1994-03-16 | 1995-10-03 | Asahi Glass Co Ltd | 半導体素子・集積回路装置 |
JPH08153833A (ja) * | 1994-11-29 | 1996-06-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2000150727A (ja) * | 1998-11-09 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
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AU2002351024A8 (en) | 2003-06-10 |
AU2002351024A1 (en) | 2003-06-10 |
CN1599956A (zh) | 2005-03-23 |
WO2003044858A3 (en) | 2004-02-05 |
EP1451869B1 (en) | 2012-07-11 |
EP1451869A2 (en) | 2004-09-01 |
US7098545B2 (en) | 2006-08-29 |
JP4583757B2 (ja) | 2010-11-17 |
US20050082681A1 (en) | 2005-04-21 |
JP2010147500A (ja) | 2010-07-01 |
JP5220783B2 (ja) | 2013-06-26 |
WO2003044858A2 (en) | 2003-05-30 |
CN1288750C (zh) | 2006-12-06 |
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