JPS5856356A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5856356A JPS5856356A JP15558781A JP15558781A JPS5856356A JP S5856356 A JPS5856356 A JP S5856356A JP 15558781 A JP15558781 A JP 15558781A JP 15558781 A JP15558781 A JP 15558781A JP S5856356 A JPS5856356 A JP S5856356A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- resin film
- pattern
- insulating film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229920005989 resin Polymers 0.000 claims abstract description 74
- 239000011347 resin Substances 0.000 claims abstract description 74
- 239000004020 conductor Substances 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15558781A JPS5856356A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15558781A JPS5856356A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856356A true JPS5856356A (ja) | 1983-04-04 |
| JPS6359540B2 JPS6359540B2 (enrdf_load_stackoverflow) | 1988-11-21 |
Family
ID=15609296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15558781A Granted JPS5856356A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856356A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62268659A (ja) * | 1986-05-19 | 1987-11-21 | Canon Inc | 画像記録装置 |
-
1981
- 1981-09-29 JP JP15558781A patent/JPS5856356A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62268659A (ja) * | 1986-05-19 | 1987-11-21 | Canon Inc | 画像記録装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6359540B2 (enrdf_load_stackoverflow) | 1988-11-21 |
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