JPS5848436A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5848436A
JPS5848436A JP14608881A JP14608881A JPS5848436A JP S5848436 A JPS5848436 A JP S5848436A JP 14608881 A JP14608881 A JP 14608881A JP 14608881 A JP14608881 A JP 14608881A JP S5848436 A JPS5848436 A JP S5848436A
Authority
JP
Japan
Prior art keywords
film
groove
silicon
semiconductor device
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14608881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359539B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Fukuyama
福山 敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14608881A priority Critical patent/JPS5848436A/ja
Publication of JPS5848436A publication Critical patent/JPS5848436A/ja
Publication of JPS6359539B2 publication Critical patent/JPS6359539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP14608881A 1981-09-18 1981-09-18 半導体装置の製造方法 Granted JPS5848436A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14608881A JPS5848436A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14608881A JPS5848436A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5848436A true JPS5848436A (ja) 1983-03-22
JPS6359539B2 JPS6359539B2 (enrdf_load_stackoverflow) 1988-11-21

Family

ID=15399852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14608881A Granted JPS5848436A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5848436A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6359539B2 (enrdf_load_stackoverflow) 1988-11-21

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