JPS5844726A - ゲッタリング方法 - Google Patents

ゲッタリング方法

Info

Publication number
JPS5844726A
JPS5844726A JP14253081A JP14253081A JPS5844726A JP S5844726 A JPS5844726 A JP S5844726A JP 14253081 A JP14253081 A JP 14253081A JP 14253081 A JP14253081 A JP 14253081A JP S5844726 A JPS5844726 A JP S5844726A
Authority
JP
Japan
Prior art keywords
sink
semiconductor
beams
laser
laser beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14253081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229894B2 (enExample
Inventor
Yasushi Sawada
廉士 澤田
Toshiro Karaki
俊郎 唐木
Junji Watanabe
純二 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14253081A priority Critical patent/JPS5844726A/ja
Publication of JPS5844726A publication Critical patent/JPS5844726A/ja
Publication of JPS6229894B2 publication Critical patent/JPS6229894B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
JP14253081A 1981-09-11 1981-09-11 ゲッタリング方法 Granted JPS5844726A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14253081A JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14253081A JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Publications (2)

Publication Number Publication Date
JPS5844726A true JPS5844726A (ja) 1983-03-15
JPS6229894B2 JPS6229894B2 (enExample) 1987-06-29

Family

ID=15317497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14253081A Granted JPS5844726A (ja) 1981-09-11 1981-09-11 ゲッタリング方法

Country Status (1)

Country Link
JP (1) JPS5844726A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261192A (ja) * 2005-03-15 2006-09-28 Fujitsu Ltd シリコンウェーハの処理方法及び該方法を実施する装置
JP2009272440A (ja) * 2008-05-07 2009-11-19 Sumco Corp 半導体ウェーハの製造方法
WO2010044279A1 (ja) * 2008-10-16 2010-04-22 株式会社Sumco ゲッタリングシンクを有する固体撮像素子用エピタキシャル基板、半導体デバイス、裏面照射型固体撮像素子およびそれらの製造方法
JP2010098105A (ja) * 2008-10-16 2010-04-30 Sumco Corp 固体撮像素子用エピタキシャル基板の製造方法、固体撮像素子用エピタキシャル基板
JP2010225730A (ja) * 2009-03-23 2010-10-07 Sumco Corp シリコンウェーハの製造方法、エピタキシャルウェーハの製造方法、および固体撮像素子の製造方法
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (enExample) * 1971-08-11 1973-04-04
JPS566432A (en) * 1979-06-27 1981-01-23 Sony Corp Treatment of semiconductor substrate
JPS5618430A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
JPS5618480A (en) * 1979-07-23 1981-02-21 Toshiba Corp Manufacture of display device
JPS56105641A (en) * 1980-01-25 1981-08-22 Mitsubishi Electric Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (enExample) * 1971-08-11 1973-04-04
JPS566432A (en) * 1979-06-27 1981-01-23 Sony Corp Treatment of semiconductor substrate
JPS5618480A (en) * 1979-07-23 1981-02-21 Toshiba Corp Manufacture of display device
JPS5618430A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
JPS56105641A (en) * 1980-01-25 1981-08-22 Mitsubishi Electric Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261192A (ja) * 2005-03-15 2006-09-28 Fujitsu Ltd シリコンウェーハの処理方法及び該方法を実施する装置
JP2009272440A (ja) * 2008-05-07 2009-11-19 Sumco Corp 半導体ウェーハの製造方法
WO2010044279A1 (ja) * 2008-10-16 2010-04-22 株式会社Sumco ゲッタリングシンクを有する固体撮像素子用エピタキシャル基板、半導体デバイス、裏面照射型固体撮像素子およびそれらの製造方法
JP2010098105A (ja) * 2008-10-16 2010-04-30 Sumco Corp 固体撮像素子用エピタキシャル基板の製造方法、固体撮像素子用エピタキシャル基板
US9281197B2 (en) 2008-10-16 2016-03-08 Sumco Corporation Epitaxial substrate for solid-state imaging device with gettering sink, semiconductor device, back illuminated solid-state imaging device and manufacturing method thereof
JP2010225730A (ja) * 2009-03-23 2010-10-07 Sumco Corp シリコンウェーハの製造方法、エピタキシャルウェーハの製造方法、および固体撮像素子の製造方法
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置

Also Published As

Publication number Publication date
JPS6229894B2 (enExample) 1987-06-29

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