JPS5823749B2 - モノリシック集積電流源 - Google Patents
モノリシック集積電流源Info
- Publication number
- JPS5823749B2 JPS5823749B2 JP47095648A JP9564872A JPS5823749B2 JP S5823749 B2 JPS5823749 B2 JP S5823749B2 JP 47095648 A JP47095648 A JP 47095648A JP 9564872 A JP9564872 A JP 9564872A JP S5823749 B2 JPS5823749 B2 JP S5823749B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- pnp
- substrate
- collector
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000001954 sterilising effect Effects 0.000 claims description 2
- 238000004659 sterilization and disinfection Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2147179A DE2147179C3 (de) | 1971-09-22 | 1971-09-22 | Monolithisch integrierte Stromquelle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4841681A JPS4841681A (enrdf_load_stackoverflow) | 1973-06-18 |
| JPS5823749B2 true JPS5823749B2 (ja) | 1983-05-17 |
Family
ID=5820199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47095648A Expired JPS5823749B2 (ja) | 1971-09-22 | 1972-09-22 | モノリシック集積電流源 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5823749B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2147179C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2153437B1 (enrdf_load_stackoverflow) |
| GB (2) | GB1413467A (enrdf_load_stackoverflow) |
| IT (1) | IT967693B (enrdf_load_stackoverflow) |
| NL (1) | NL7212778A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3220736A1 (de) * | 1981-08-21 | 1983-04-28 | Burr-Brown Research Corp., 85734 Tucson, Ariz. | Schaltungsanordnung und verfahren zur sperrstromkompensation bei halbleitern |
| US4430624A (en) * | 1982-06-24 | 1984-02-07 | Motorola, Inc. | Current mirror circuit arrangement |
| GB2135846B (en) * | 1983-02-04 | 1986-03-12 | Standard Telephones Cables Ltd | Current splitter |
| JPS6089960A (ja) * | 1984-08-06 | 1985-05-20 | Nec Corp | 半導体集積回路装置 |
| DE3933433A1 (de) * | 1988-11-02 | 1990-05-03 | Bosch Gmbh Robert | Stromregler |
| JP3457126B2 (ja) * | 1996-07-12 | 2003-10-14 | 三菱電機株式会社 | 車両用交流発電機の制御装置 |
| JP5700896B1 (ja) * | 2014-03-20 | 2015-04-15 | 株式会社ショーワ | カバー部材および緩衝装置 |
| EP3905522A1 (en) * | 2020-04-29 | 2021-11-03 | ams International AG | Power on reset circuit and integrated circuit including the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB769584A (en) * | 1954-09-20 | 1957-03-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions |
| GB891229A (en) * | 1958-10-17 | 1962-03-14 | Advanced Res Associates Inc | Circuit for thermal compensation of transistors |
| US3509362A (en) * | 1966-08-19 | 1970-04-28 | Rca Corp | Switching circuit |
-
1971
- 1971-09-22 DE DE2147179A patent/DE2147179C3/de not_active Expired
-
1972
- 1972-09-21 IT IT29475/72A patent/IT967693B/it active
- 1972-09-21 GB GB1930175A patent/GB1413467A/en not_active Expired
- 1972-09-21 GB GB1815675A patent/GB1413466A/en not_active Expired
- 1972-09-21 NL NL7212778A patent/NL7212778A/xx not_active Application Discontinuation
- 1972-09-22 JP JP47095648A patent/JPS5823749B2/ja not_active Expired
- 1972-09-22 FR FR7233736A patent/FR2153437B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2153437B1 (enrdf_load_stackoverflow) | 1976-10-29 |
| GB1413466A (en) | 1975-11-12 |
| DE2147179C3 (de) | 1984-11-08 |
| GB1413467A (en) | 1975-11-12 |
| DE2147179B2 (de) | 1977-07-28 |
| FR2153437A1 (enrdf_load_stackoverflow) | 1973-05-04 |
| JPS4841681A (enrdf_load_stackoverflow) | 1973-06-18 |
| NL7212778A (enrdf_load_stackoverflow) | 1973-03-26 |
| DE2147179A1 (de) | 1973-03-29 |
| IT967693B (it) | 1974-03-11 |
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