JPS4841681A - - Google Patents

Info

Publication number
JPS4841681A
JPS4841681A JP47095648A JP9564872A JPS4841681A JP S4841681 A JPS4841681 A JP S4841681A JP 47095648 A JP47095648 A JP 47095648A JP 9564872 A JP9564872 A JP 9564872A JP S4841681 A JPS4841681 A JP S4841681A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47095648A
Other languages
Japanese (ja)
Other versions
JPS5823749B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4841681A publication Critical patent/JPS4841681A/ja
Publication of JPS5823749B2 publication Critical patent/JPS5823749B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
JP47095648A 1971-09-22 1972-09-22 モノリシック集積電流源 Expired JPS5823749B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2147179A DE2147179C3 (de) 1971-09-22 1971-09-22 Monolithisch integrierte Stromquelle

Publications (2)

Publication Number Publication Date
JPS4841681A true JPS4841681A (enrdf_load_stackoverflow) 1973-06-18
JPS5823749B2 JPS5823749B2 (ja) 1983-05-17

Family

ID=5820199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47095648A Expired JPS5823749B2 (ja) 1971-09-22 1972-09-22 モノリシック集積電流源

Country Status (6)

Country Link
JP (1) JPS5823749B2 (enrdf_load_stackoverflow)
DE (1) DE2147179C3 (enrdf_load_stackoverflow)
FR (1) FR2153437B1 (enrdf_load_stackoverflow)
GB (2) GB1413467A (enrdf_load_stackoverflow)
IT (1) IT967693B (enrdf_load_stackoverflow)
NL (1) NL7212778A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089960A (ja) * 1984-08-06 1985-05-20 Nec Corp 半導体集積回路装置
JP5700896B1 (ja) * 2014-03-20 2015-04-15 株式会社ショーワ カバー部材および緩衝装置
JP2023523252A (ja) * 2020-04-29 2023-06-02 アーエムエス インターナショナル アーゲー パワーオンリセット回路およびそれを備えた集積回路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220736A1 (de) * 1981-08-21 1983-04-28 Burr-Brown Research Corp., 85734 Tucson, Ariz. Schaltungsanordnung und verfahren zur sperrstromkompensation bei halbleitern
US4430624A (en) * 1982-06-24 1984-02-07 Motorola, Inc. Current mirror circuit arrangement
GB2135846B (en) * 1983-02-04 1986-03-12 Standard Telephones Cables Ltd Current splitter
DE3933433A1 (de) * 1988-11-02 1990-05-03 Bosch Gmbh Robert Stromregler
JP3457126B2 (ja) * 1996-07-12 2003-10-14 三菱電機株式会社 車両用交流発電機の制御装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769584A (en) * 1954-09-20 1957-03-13 Mullard Radio Valve Co Ltd Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions
GB891229A (en) * 1958-10-17 1962-03-14 Advanced Res Associates Inc Circuit for thermal compensation of transistors
US3509362A (en) * 1966-08-19 1970-04-28 Rca Corp Switching circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089960A (ja) * 1984-08-06 1985-05-20 Nec Corp 半導体集積回路装置
JP5700896B1 (ja) * 2014-03-20 2015-04-15 株式会社ショーワ カバー部材および緩衝装置
JP2023523252A (ja) * 2020-04-29 2023-06-02 アーエムエス インターナショナル アーゲー パワーオンリセット回路およびそれを備えた集積回路

Also Published As

Publication number Publication date
FR2153437B1 (enrdf_load_stackoverflow) 1976-10-29
GB1413466A (en) 1975-11-12
DE2147179C3 (de) 1984-11-08
JPS5823749B2 (ja) 1983-05-17
GB1413467A (en) 1975-11-12
DE2147179B2 (de) 1977-07-28
FR2153437A1 (enrdf_load_stackoverflow) 1973-05-04
NL7212778A (enrdf_load_stackoverflow) 1973-03-26
DE2147179A1 (de) 1973-03-29
IT967693B (it) 1974-03-11

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