GB891229A - Circuit for thermal compensation of transistors - Google Patents

Circuit for thermal compensation of transistors

Info

Publication number
GB891229A
GB891229A GB42096/58A GB4209658A GB891229A GB 891229 A GB891229 A GB 891229A GB 42096/58 A GB42096/58 A GB 42096/58A GB 4209658 A GB4209658 A GB 4209658A GB 891229 A GB891229 A GB 891229A
Authority
GB
United Kingdom
Prior art keywords
stages
transistor
emitter
transistors
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42096/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Research Associates Inc
Original Assignee
Advanced Research Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Research Associates Inc filed Critical Advanced Research Associates Inc
Publication of GB891229A publication Critical patent/GB891229A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

891,229. Transistor circuits. ADVANCED RESEARCH ASSOCIATES Inc. Dec. 30, 1958 [Oct. 17, 1958], No. 42096/58. Addition to 874,175. Class 40(6). A composite element having characteristics similar to that of a zener diode or a transistor comprises three transistor stages or a zener diode stage followed by two transistor stages, the last two stages being each stabilized by a transistor arranged between respective emitter and base electrodes and having a floating base electrode. Fig. 1 shows a circuit equivalent to a single NPN common emitter stage and having effective base, emitter and collector terminals B, E and C. It comprises a common emitter NPN stage 38 and common emitter PNP stages 40 and 42 in cascade. The last stages are stabilized by means of auxiliary transistors 60 and 64 connected between the respective emitter and base electrodes and having floating base electrodes, the auxiliary transistors being arranged to pass the collector-base leakage current of the amplifier transistors. Transistor 38 is of silicon type while transistors 40 and 42 are of germanium type having a low surface leakage and a high gain relative to transistor 38. A diode 70 is provided to improve the inverse voltage rating of the input circuit. Figs. 2-6 (not shown) illustrate alternative cicuits equivalent to single transistors of PNP and NPN type with various combinations of common emitter and common collector circuits in the first two stages and with various combinations of PNP and NPN transistors. In Fig. 7 a common base stage followed by two stabilized common emitter stages are arranged to form the equivalent of a single PNPN stage with effective base, emitter and collector terminals B, E and C. Figs. 8, 9 and 10 (not shown) illustrate alternative arrangements providing the equivalent of single PNPN and NPNP stages. In Fig. 11a two stabilized stages are provided and a zener diode is connected across the input of the first stage so that the circuits appear at terminals 300 and 302 as the equivalent of a single zener diode.
GB42096/58A 1958-10-17 1958-12-30 Circuit for thermal compensation of transistors Expired GB891229A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US891229XA 1958-10-17 1958-10-17

Publications (1)

Publication Number Publication Date
GB891229A true GB891229A (en) 1962-03-14

Family

ID=22215814

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42096/58A Expired GB891229A (en) 1958-10-17 1958-12-30 Circuit for thermal compensation of transistors

Country Status (1)

Country Link
GB (1) GB891229A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2147179A1 (en) * 1971-09-22 1973-03-29 Bosch Gmbh Robert ARRANGEMENT FOR DERIVATIVE OR COMPENSATION OF RESIDUAL FLOWS IN MONOLITHICALLY INTEGRATED CIRCUITS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2147179A1 (en) * 1971-09-22 1973-03-29 Bosch Gmbh Robert ARRANGEMENT FOR DERIVATIVE OR COMPENSATION OF RESIDUAL FLOWS IN MONOLITHICALLY INTEGRATED CIRCUITS

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