JPS58222556A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58222556A
JPS58222556A JP57105411A JP10541182A JPS58222556A JP S58222556 A JPS58222556 A JP S58222556A JP 57105411 A JP57105411 A JP 57105411A JP 10541182 A JP10541182 A JP 10541182A JP S58222556 A JPS58222556 A JP S58222556A
Authority
JP
Japan
Prior art keywords
emitter
polysilicon
gate
window
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57105411A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481336B2 (en, 2012
Inventor
Takahide Ikeda
池田　隆英
Kiyoshi Tsukuda
佃　清
Mitsuru Hirao
充 平尾
Nobuaki Miyagawa
宣明 宮川
Tokuo Watanabe
篤雄 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57105411A priority Critical patent/JPS58222556A/ja
Publication of JPS58222556A publication Critical patent/JPS58222556A/ja
Publication of JPH0481336B2 publication Critical patent/JPH0481336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57105411A 1982-06-21 1982-06-21 半導体装置の製造方法 Granted JPS58222556A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57105411A JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57105411A JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58222556A true JPS58222556A (ja) 1983-12-24
JPH0481336B2 JPH0481336B2 (en, 2012) 1992-12-22

Family

ID=14406861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57105411A Granted JPS58222556A (ja) 1982-06-21 1982-06-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58222556A (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286752A (ja) * 1985-10-11 1987-04-21 Matsushita Electronics Corp 半導体集積回路の製造方法
JPS6331155A (ja) * 1986-07-24 1988-02-09 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
US5106765A (en) * 1986-02-28 1992-04-21 Canon Kabushiki Kaisha Process for making a bimos

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591857A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS55157257A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of mos integrated circuit
JPS567462A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591857A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS55157257A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of mos integrated circuit
JPS567462A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286752A (ja) * 1985-10-11 1987-04-21 Matsushita Electronics Corp 半導体集積回路の製造方法
US5106765A (en) * 1986-02-28 1992-04-21 Canon Kabushiki Kaisha Process for making a bimos
US5488251A (en) * 1986-02-28 1996-01-30 Canon Kabushiki Kaisha Semiconductor device and process for producing the same
JPS6331155A (ja) * 1986-07-24 1988-02-09 Mitsubishi Electric Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPH0481336B2 (en, 2012) 1992-12-22

Similar Documents

Publication Publication Date Title
US4879255A (en) Method for fabricating bipolar-MOS devices
JPH0576190B2 (en, 2012)
JPH0519811B2 (en, 2012)
JPH0521726A (ja) ＢｉＣＭＯＳ装置及びその製造方法
JPS62226667A (ja) 半導体装置およびその製造方法
JPH0510828B2 (en, 2012)
JP2000077532A (ja) 半導体装置およびその製造方法
JPH0348459A (ja) 半導体装置及びその製造方法
US4983531A (en) Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors
JPS58170047A (ja) 半導体装置
JPS58222556A (ja) 半導体装置の製造方法
JPH10135349A (ja) Ｃｍｏｓ型半導体装置及びその製造方法
JPS6038856A (ja) 半導体装置及びその製造方法
JP2997123B2 (ja) 半導体装置の製造方法
JP2575876B2 (ja) 半導体装置
JP3132455B2 (ja) 半導体装置の製造方法
JPS61160965A (ja) 半導体集積回路装置
JPS643065B2 (en, 2012)
JP2610906B2 (ja) ＢｉＭＯＳ半導体回路装置の製造方法
JPS58124269A (ja) 相補型絶縁ゲート電界効果半導体装置の製造方法
JPH0243348B2 (en, 2012)
JP2953915B2 (ja) 半導体集積回路装置及びその製造方法
JPH03204968A (ja) 半導体装置の製造方法
JPH0517701B2 (en, 2012)
JPS60211867A (ja) 半導体装置及びその製造方法