JPH0517701B2 - - Google Patents

Info

Publication number
JPH0517701B2
JPH0517701B2 JP58011281A JP1128183A JPH0517701B2 JP H0517701 B2 JPH0517701 B2 JP H0517701B2 JP 58011281 A JP58011281 A JP 58011281A JP 1128183 A JP1128183 A JP 1128183A JP H0517701 B2 JPH0517701 B2 JP H0517701B2
Authority
JP
Japan
Prior art keywords
transistor
polycrystalline silicon
bipolar transistor
oxide film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58011281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59138363A (ja
Inventor
Takahide Ikeda
Tokuo Watanabe
Toji Mukai
Kyoshi Tsukuda
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58011281A priority Critical patent/JPS59138363A/ja
Publication of JPS59138363A publication Critical patent/JPS59138363A/ja
Publication of JPH0517701B2 publication Critical patent/JPH0517701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP58011281A 1983-01-28 1983-01-28 半導体装置及びその製造方法 Granted JPS59138363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011281A JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011281A JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2197967A Division JPH0793384B2 (ja) 1990-07-27 1990-07-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59138363A JPS59138363A (ja) 1984-08-08
JPH0517701B2 true JPH0517701B2 (en, 2012) 1993-03-09

Family

ID=11773606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011281A Granted JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59138363A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
JPH0666422B2 (ja) * 1986-09-16 1994-08-24 日本電気株式会社 半導体装置及びその製造方法
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939901B2 (ja) * 1978-12-28 1984-09-27 富士通株式会社 半導体装置の製造方法
JPS5939905B2 (ja) * 1978-12-28 1984-09-27 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59138363A (ja) 1984-08-08

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