JPS6442852A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6442852A
JPS6442852A JP62199628A JP19962887A JPS6442852A JP S6442852 A JPS6442852 A JP S6442852A JP 62199628 A JP62199628 A JP 62199628A JP 19962887 A JP19962887 A JP 19962887A JP S6442852 A JPS6442852 A JP S6442852A
Authority
JP
Japan
Prior art keywords
bipolar transistor
semiconductor device
processes
forming
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62199628A
Other languages
Japanese (ja)
Inventor
Yoichiro Niitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62199628A priority Critical patent/JPS6442852A/en
Publication of JPS6442852A publication Critical patent/JPS6442852A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simplify the processes by a method wherein the first gate electrode of an element and an emitter electrode of a bipolar transistor are formed of the same silicon layer. CONSTITUTION:The first gate electrode of a bipolar transistor are formed of the same polysilicon layer 9 and then a semiconductor device is constituted by heat treatment at the temperature exceeding 1000 deg.C in case of forming the second gate oxide film 13a of the element as well as in case of forming an emitter diffused layer 14 by impurity diffusion from an emitter electrode of the bipolar transistor. Through these procedures, the processes are simplified and made common to cut down the cost thereof.
JP62199628A 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof Pending JPS6442852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199628A JPS6442852A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199628A JPS6442852A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6442852A true JPS6442852A (en) 1989-02-15

Family

ID=16411013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199628A Pending JPS6442852A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6442852A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138363A (en) * 1983-01-28 1984-08-08 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6066852A (en) * 1983-09-22 1985-04-17 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS61294871A (en) * 1985-06-21 1986-12-25 コミツサリア　ア　レネルジイ　アトミツク Production of integrated circuit
JPS6276668A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor memory device
JPS6289352A (en) * 1985-10-16 1987-04-23 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138363A (en) * 1983-01-28 1984-08-08 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6066852A (en) * 1983-09-22 1985-04-17 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS61294871A (en) * 1985-06-21 1986-12-25 コミツサリア　ア　レネルジイ　アトミツク Production of integrated circuit
JPS6276668A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor memory device
JPS6289352A (en) * 1985-10-16 1987-04-23 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

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