JPS59138363A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS59138363A
JPS59138363A JP58011281A JP1128183A JPS59138363A JP S59138363 A JPS59138363 A JP S59138363A JP 58011281 A JP58011281 A JP 58011281A JP 1128183 A JP1128183 A JP 1128183A JP S59138363 A JPS59138363 A JP S59138363A
Authority
JP
Japan
Prior art keywords
transistor
semiconductor device
electrode
polycrystalline silicon
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58011281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517701B2 (en, 2012
Inventor
Takahide Ikeda
池田　隆英
Tokuo Watanabe
篤雄 渡辺
Toji Mukai
向井　藤司
Kiyoshi Tsukuda
佃　清
Tatsuya Kamei
亀井　達弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58011281A priority Critical patent/JPS59138363A/ja
Publication of JPS59138363A publication Critical patent/JPS59138363A/ja
Publication of JPH0517701B2 publication Critical patent/JPH0517701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP58011281A 1983-01-28 1983-01-28 半導体装置及びその製造方法 Granted JPS59138363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011281A JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011281A JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2197967A Division JPH0793384B2 (ja) 1990-07-27 1990-07-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59138363A true JPS59138363A (ja) 1984-08-08
JPH0517701B2 JPH0517701B2 (en, 2012) 1993-03-09

Family

ID=11773606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011281A Granted JPS59138363A (ja) 1983-01-28 1983-01-28 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59138363A (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373552A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置及びその製造方法
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof
US4845532A (en) * 1985-03-23 1989-07-04 Stc Plc Semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591858A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5591857A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591858A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5591857A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845532A (en) * 1985-03-23 1989-07-04 Stc Plc Semiconductor devices
JPS6373552A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置及びその製造方法
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0517701B2 (en, 2012) 1993-03-09

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