JPH0441510B2 - - Google Patents
Info
- Publication number
- JPH0441510B2 JPH0441510B2 JP58177245A JP17724583A JPH0441510B2 JP H0441510 B2 JPH0441510 B2 JP H0441510B2 JP 58177245 A JP58177245 A JP 58177245A JP 17724583 A JP17724583 A JP 17724583A JP H0441510 B2 JPH0441510 B2 JP H0441510B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- wiring layer
- aluminum
- contact
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17724583A JPS6068614A (ja) | 1983-09-26 | 1983-09-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17724583A JPS6068614A (ja) | 1983-09-26 | 1983-09-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6068614A JPS6068614A (ja) | 1985-04-19 |
JPH0441510B2 true JPH0441510B2 (en, 2012) | 1992-07-08 |
Family
ID=16027687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17724583A Granted JPS6068614A (ja) | 1983-09-26 | 1983-09-26 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6068614A (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW520072U (en) * | 1991-07-08 | 2003-02-01 | Samsung Electronics Co Ltd | A semiconductor device having a multi-layer metal contact |
KR950009934B1 (ko) * | 1992-09-07 | 1995-09-01 | 삼성전자주식회사 | 반도체 장치의 배선층 형성방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186357A (en) * | 1981-05-11 | 1982-11-16 | Yamagata Nippon Denki Kk | Semiconductor element |
-
1983
- 1983-09-26 JP JP17724583A patent/JPS6068614A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6068614A (ja) | 1985-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4337476A (en) | Silicon rich refractory silicides as gate metal | |
JPH0523055B2 (en, 2012) | ||
JP3626773B2 (ja) | 半導体デバイスの導電層、mosfet及びそれらの製造方法 | |
JPS6298642A (ja) | 半導体集積回路装置の製造方法 | |
JPS62113421A (ja) | 半導体装置の製造方法 | |
JPH0441510B2 (en, 2012) | ||
JPS61127124A (ja) | 半導体装置 | |
JP3156001B2 (ja) | 半導体装置の製造方法 | |
JPS59197162A (ja) | 半導体装置 | |
JPS61174767A (ja) | 半導体素子電極 | |
JPS61267365A (ja) | 半導体装置 | |
JPS62122173A (ja) | 半導体装置 | |
JPH01160009A (ja) | 半導体装置の製造方法 | |
JPS6197975A (ja) | 半導体装置の製造方法 | |
JP3183793B2 (ja) | 半導体装置及びその製造方法 | |
JPS59169179A (ja) | 半導体集積回路装置 | |
JPH0227769A (ja) | 半導体装置 | |
JPS59208772A (ja) | 半導体装置の製造方法 | |
JPS61225838A (ja) | 電極配線の形成方法 | |
JPS59138363A (ja) | 半導体装置及びその製造方法 | |
JPS62200747A (ja) | 半導体装置の製造方法 | |
JPS6386514A (ja) | 半導体装置の製造方法 | |
JPH06291077A (ja) | 半導体装置及びその製造方法 | |
JPS6295869A (ja) | 半導体装置 | |
JPS592377A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |