JPS643065B2 - - Google Patents
Info
- Publication number
- JPS643065B2 JPS643065B2 JP54065449A JP6544979A JPS643065B2 JP S643065 B2 JPS643065 B2 JP S643065B2 JP 54065449 A JP54065449 A JP 54065449A JP 6544979 A JP6544979 A JP 6544979A JP S643065 B2 JPS643065 B2 JP S643065B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- region
- conductivity type
- gate
- impurity diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000000034 method Methods 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6544979A JPS55157257A (en) | 1979-05-25 | 1979-05-25 | Manufacture of mos integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6544979A JPS55157257A (en) | 1979-05-25 | 1979-05-25 | Manufacture of mos integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55157257A JPS55157257A (en) | 1980-12-06 |
| JPS643065B2 true JPS643065B2 (en, 2012) | 1989-01-19 |
Family
ID=13287452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6544979A Granted JPS55157257A (en) | 1979-05-25 | 1979-05-25 | Manufacture of mos integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157257A (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58222556A (ja) * | 1982-06-21 | 1983-12-24 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS6185855A (ja) * | 1984-10-04 | 1986-05-01 | Nec Corp | 半導体集積回路 |
| JPS6231151A (ja) * | 1985-08-02 | 1987-02-10 | Nec Corp | 半導体集積回路装置 |
| JP2631673B2 (ja) * | 1987-12-18 | 1997-07-16 | 富士通株式会社 | 半導体装置とその製造方法 |
| JPH03256332A (ja) * | 1990-03-06 | 1991-11-15 | Sharp Corp | 縦型バイポーラトランジスタ素子及び該素子を備えたｂｉ―ＣＭＯＳインバータ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915495B2 (ja) * | 1974-10-04 | 1984-04-10 | 日本電気株式会社 | 半導体装置 |
-
1979
- 1979-05-25 JP JP6544979A patent/JPS55157257A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55157257A (en) | 1980-12-06 |
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