JPS55157257A - Manufacture of mos integrated circuit - Google Patents

Manufacture of mos integrated circuit

Info

Publication number
JPS55157257A
JPS55157257A JP6544979A JP6544979A JPS55157257A JP S55157257 A JPS55157257 A JP S55157257A JP 6544979 A JP6544979 A JP 6544979A JP 6544979 A JP6544979 A JP 6544979A JP S55157257 A JPS55157257 A JP S55157257A
Authority
JP
Japan
Prior art keywords
emitter
collector
source
mos transistor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6544979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643065B2 (en, 2012
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6544979A priority Critical patent/JPS55157257A/ja
Publication of JPS55157257A publication Critical patent/JPS55157257A/ja
Publication of JPS643065B2 publication Critical patent/JPS643065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP6544979A 1979-05-25 1979-05-25 Manufacture of mos integrated circuit Granted JPS55157257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6544979A JPS55157257A (en) 1979-05-25 1979-05-25 Manufacture of mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6544979A JPS55157257A (en) 1979-05-25 1979-05-25 Manufacture of mos integrated circuit

Publications (2)

Publication Number Publication Date
JPS55157257A true JPS55157257A (en) 1980-12-06
JPS643065B2 JPS643065B2 (en, 2012) 1989-01-19

Family

ID=13287452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6544979A Granted JPS55157257A (en) 1979-05-25 1979-05-25 Manufacture of mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS55157257A (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS6185855A (ja) * 1984-10-04 1986-05-01 Nec Corp 半導体集積回路
JPS6231151A (ja) * 1985-08-02 1987-02-10 Nec Corp 半導体集積回路装置
JPH01161763A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置とその製造方法
JPH03256332A (ja) * 1990-03-06 1991-11-15 Sharp Corp 縦型バイポーラトランジスタ素子及び該素子を備えたｂｉ―ＣＭＯＳインバータ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en, 2012) * 1974-10-04 1976-04-06 Nippon Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140866A (en, 2012) * 1974-10-04 1976-04-06 Nippon Electric Co

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS6185855A (ja) * 1984-10-04 1986-05-01 Nec Corp 半導体集積回路
JPS6231151A (ja) * 1985-08-02 1987-02-10 Nec Corp 半導体集積回路装置
JPH01161763A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置とその製造方法
JPH03256332A (ja) * 1990-03-06 1991-11-15 Sharp Corp 縦型バイポーラトランジスタ素子及び該素子を備えたｂｉ―ＣＭＯＳインバータ

Also Published As

Publication number Publication date
JPS643065B2 (en, 2012) 1989-01-19

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