JPH0510828B2 - - Google Patents

Info

Publication number
JPH0510828B2
JPH0510828B2 JP58053077A JP5307783A JPH0510828B2 JP H0510828 B2 JPH0510828 B2 JP H0510828B2 JP 58053077 A JP58053077 A JP 58053077A JP 5307783 A JP5307783 A JP 5307783A JP H0510828 B2 JPH0510828 B2 JP H0510828B2
Authority
JP
Japan
Prior art keywords
buried layer
semiconductor substrate
conductivity type
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58053077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59177960A (ja
Inventor
Takahide Ikeda
Tokuo Watanabe
Toji Mukai
Masanori Odaka
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58053077A priority Critical patent/JPS59177960A/ja
Priority to KR1019840001393A priority patent/KR900000828B1/ko
Priority to PCT/JP1984/000133 priority patent/WO1984003996A1/ja
Priority to DE8484901232T priority patent/DE3479548D1/de
Priority to EP84901232A priority patent/EP0139019B1/en
Publication of JPS59177960A publication Critical patent/JPS59177960A/ja
Priority to US07/037,123 priority patent/US4799098A/en
Publication of JPH0510828B2 publication Critical patent/JPH0510828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP58053077A 1983-03-28 1983-03-28 半導体装置およびその製造方法 Granted JPS59177960A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP58053077A JPS59177960A (ja) 1983-03-28 1983-03-28 半導体装置およびその製造方法
KR1019840001393A KR900000828B1 (ko) 1983-03-28 1984-03-19 반도체장치 및 그 제조방법
PCT/JP1984/000133 WO1984003996A1 (fr) 1983-03-28 1984-03-26 Dispositif semiconducteur et son procede de fabrication
DE8484901232T DE3479548D1 (en) 1983-03-28 1984-03-26 Semiconductor device and method of manufacture thereof
EP84901232A EP0139019B1 (en) 1983-03-28 1984-03-26 Semiconductor device and method of manufacture thereof
US07/037,123 US4799098A (en) 1983-03-28 1987-04-10 MOS/bipolar device with stepped buried layer under active regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053077A JPS59177960A (ja) 1983-03-28 1983-03-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59177960A JPS59177960A (ja) 1984-10-08
JPH0510828B2 true JPH0510828B2 (en, 2012) 1993-02-10

Family

ID=12932735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053077A Granted JPS59177960A (ja) 1983-03-28 1983-03-28 半導体装置およびその製造方法

Country Status (6)

Country Link
US (1) US4799098A (en, 2012)
EP (1) EP0139019B1 (en, 2012)
JP (1) JPS59177960A (en, 2012)
KR (1) KR900000828B1 (en, 2012)
DE (1) DE3479548D1 (en, 2012)
WO (1) WO1984003996A1 (en, 2012)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001062B1 (ko) * 1987-09-15 1990-02-26 강진구 반도체 바이 씨 모오스 장치의 제조방법
JPH01186673A (ja) * 1988-01-14 1989-07-26 Hitachi Ltd 半導体装置
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
JPH01259554A (ja) * 1988-04-11 1989-10-17 Toshiba Corp バイポーラ・ｍｏｓ混載半導体装置の製造方法
US5093707A (en) * 1988-04-27 1992-03-03 Kabushiki Kaisha Toshiba Semiconductor device with bipolar and cmos transistors
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects
US5256582A (en) * 1989-02-10 1993-10-26 Texas Instruments Incorporated Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
JPH0348457A (ja) * 1989-04-14 1991-03-01 Toshiba Corp 半導体装置およびその製造方法
US5455447A (en) * 1989-05-10 1995-10-03 Texas Instruments Incorporated Vertical PNP transistor in merged bipolar/CMOS technology
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
JPH07105458B2 (ja) * 1989-11-21 1995-11-13 株式会社東芝 複合型集積回路素子
US5208473A (en) * 1989-11-29 1993-05-04 Mitsubishi Denki Kabushiki Kaisha Lightly doped MISFET with reduced latchup and punchthrough
JP2643524B2 (ja) * 1990-02-27 1997-08-20 日本電気株式会社 バイポーラ集積回路装置
US5150177A (en) * 1991-12-06 1992-09-22 National Semiconductor Corporation Schottky diode structure with localized diode well
US5268316A (en) * 1991-12-06 1993-12-07 National Semiconductor Corporation Fabrication process for Schottky diode with localized diode well
DE69316134T2 (de) * 1992-09-22 1998-06-18 Nat Semiconductor Corp Verfahren zur Herstellung eines Schottky-Transistors mit retrogradierter n-Wannenkathode
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making
JP3653963B2 (ja) * 1997-12-25 2005-06-02 ソニー株式会社 半導体装置およびその製造方法
KR100265227B1 (ko) * 1998-06-05 2000-09-15 김영환 씨모스 트랜지스터의 제조 방법
US6831346B1 (en) * 2001-05-04 2004-12-14 Cypress Semiconductor Corp. Buried layer substrate isolation in integrated circuits
US20070042709A1 (en) * 2005-04-19 2007-02-22 Vector Products, Inc. Audio device having integrated satellite receiver and FM transmitter functionalities
JP5755939B2 (ja) * 2011-05-24 2015-07-29 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US3885998A (en) * 1969-12-05 1975-05-27 Siemens Ag Method for the simultaneous formation of semiconductor components with individually tailored isolation regions
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
JPS551919B2 (en, 2012) * 1973-08-08 1980-01-17
JPS5380172A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Semiconductor device
US4242691A (en) * 1978-09-18 1980-12-30 Mitsubishi Denki Kabushiki Kaisha MOS Semiconductor device
US4458158A (en) * 1979-03-12 1984-07-03 Sprague Electric Company IC Including small signal and power devices
DE3208500A1 (de) * 1982-03-09 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
US4532003A (en) * 1982-08-09 1985-07-30 Harris Corporation Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance

Also Published As

Publication number Publication date
EP0139019A1 (en) 1985-05-02
EP0139019A4 (en) 1985-12-02
JPS59177960A (ja) 1984-10-08
US4799098A (en) 1989-01-17
EP0139019B1 (en) 1989-08-23
WO1984003996A1 (fr) 1984-10-11
KR900000828B1 (ko) 1990-02-17
KR840008214A (ko) 1984-12-13
DE3479548D1 (en) 1989-09-28

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