JPS58222540A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58222540A JPS58222540A JP10561082A JP10561082A JPS58222540A JP S58222540 A JPS58222540 A JP S58222540A JP 10561082 A JP10561082 A JP 10561082A JP 10561082 A JP10561082 A JP 10561082A JP S58222540 A JPS58222540 A JP S58222540A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- conductive layer
- insulating film
- polycrystalline silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007769 metal material Substances 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 238000002844 melting Methods 0.000 abstract description 10
- 230000008018 melting Effects 0.000 abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10561082A JPS58222540A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10561082A JPS58222540A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58222540A true JPS58222540A (ja) | 1983-12-24 |
| JPS641055B2 JPS641055B2 (enrdf_load_stackoverflow) | 1989-01-10 |
Family
ID=14412267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10561082A Granted JPS58222540A (ja) | 1982-06-18 | 1982-06-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58222540A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63198357A (ja) * | 1987-02-13 | 1988-08-17 | Nec Corp | 半導体装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254777U (enrdf_load_stackoverflow) * | 1988-10-17 | 1990-04-20 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564248A (en) * | 1979-06-25 | 1981-01-17 | Nec Corp | Semiconductor device |
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
-
1982
- 1982-06-18 JP JP10561082A patent/JPS58222540A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS564248A (en) * | 1979-06-25 | 1981-01-17 | Nec Corp | Semiconductor device |
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63198357A (ja) * | 1987-02-13 | 1988-08-17 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641055B2 (enrdf_load_stackoverflow) | 1989-01-10 |
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