JPS58159383A - 全内反射を生じる入射光線指向装置を有する改善された光起電力素子 - Google Patents
全内反射を生じる入射光線指向装置を有する改善された光起電力素子Info
- Publication number
- JPS58159383A JPS58159383A JP58030683A JP3068383A JPS58159383A JP S58159383 A JPS58159383 A JP S58159383A JP 58030683 A JP58030683 A JP 58030683A JP 3068383 A JP3068383 A JP 3068383A JP S58159383 A JPS58159383 A JP S58159383A
- Authority
- JP
- Japan
- Prior art keywords
- further characterized
- layer
- random
- reflector
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US354285 | 1982-03-03 | ||
| US06/354,285 US4419533A (en) | 1982-03-03 | 1982-03-03 | Photovoltaic device having incident radiation directing means for total internal reflection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58159383A true JPS58159383A (ja) | 1983-09-21 |
Family
ID=23392626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58030683A Pending JPS58159383A (ja) | 1982-03-03 | 1983-02-25 | 全内反射を生じる入射光線指向装置を有する改善された光起電力素子 |
Country Status (20)
| Country | Link |
|---|---|
| US (1) | US4419533A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS58159383A (cg-RX-API-DMAC10.html) |
| KR (1) | KR840004309A (cg-RX-API-DMAC10.html) |
| AU (1) | AU543213B2 (cg-RX-API-DMAC10.html) |
| BR (1) | BR8300902A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1187970A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3306148A1 (cg-RX-API-DMAC10.html) |
| EG (1) | EG15060A (cg-RX-API-DMAC10.html) |
| ES (1) | ES8403667A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2522880A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB2116364B (cg-RX-API-DMAC10.html) |
| GR (1) | GR78799B (cg-RX-API-DMAC10.html) |
| IE (1) | IE54408B1 (cg-RX-API-DMAC10.html) |
| IL (1) | IL67794A (cg-RX-API-DMAC10.html) |
| IN (1) | IN157618B (cg-RX-API-DMAC10.html) |
| IT (1) | IT1167617B (cg-RX-API-DMAC10.html) |
| NL (1) | NL8300603A (cg-RX-API-DMAC10.html) |
| PH (1) | PH19299A (cg-RX-API-DMAC10.html) |
| SE (1) | SE454225B (cg-RX-API-DMAC10.html) |
| ZA (1) | ZA83748B (cg-RX-API-DMAC10.html) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399477A (ja) * | 1989-09-12 | 1991-04-24 | Canon Inc | 太陽電池 |
| US5244509A (en) * | 1990-08-09 | 1993-09-14 | Canon Kabushiki Kaisha | Substrate having an uneven surface for solar cell and a solar cell provided with said substrate |
| US5282902A (en) * | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
| US5284525A (en) * | 1990-12-13 | 1994-02-08 | Canon Kabushiki Kaisha | Solar cell |
| JP2010538448A (ja) * | 2007-08-31 | 2010-12-09 | アルセロールミタル−ステインレス アンド ニッケル アロイズ | 結晶学的にテクスチャード加工した金属基体、結晶学的にテクスチャード加工した装置、そのような装置を含む太陽電池モジュールおよび薄層付着方法 |
| JP2013539595A (ja) * | 2010-07-06 | 2013-10-24 | シンシリコン・コーポレーション | 光電池モジュール及び電極拡散層を持つ光電池モジュールの製造方法 |
Families Citing this family (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514582A (en) * | 1982-09-17 | 1985-04-30 | Exxon Research And Engineering Co. | Optical absorption enhancement in amorphous silicon deposited on rough substrate |
| US4497974A (en) * | 1982-11-22 | 1985-02-05 | Exxon Research & Engineering Co. | Realization of a thin film solar cell with a detached reflector |
| JPS59127879A (ja) * | 1983-01-12 | 1984-07-23 | Semiconductor Energy Lab Co Ltd | 光電変換装置およびその作製方法 |
| GB2139421B (en) * | 1983-03-07 | 1987-09-23 | Semiconductor Energy Lab | Semiconductor photoelectric conversion device and method of manufacture |
| US4536608A (en) * | 1983-04-25 | 1985-08-20 | Exxon Research And Engineering Co. | Solar cell with two-dimensional hexagonal reflecting diffraction grating |
| DE3705173A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung |
| EP0263497B1 (en) * | 1986-10-07 | 1994-05-18 | Canon Kabushiki Kaisha | Image reading device |
| FR2615327A1 (fr) * | 1987-03-27 | 1988-11-18 | Sanyo Electric Co | Dispositif photovoltaique |
| US5138214A (en) * | 1989-12-27 | 1992-08-11 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric transducer and method of adjusting oscillation frequency thereof |
| DE4004398A1 (de) * | 1990-02-13 | 1991-08-14 | Siemens Ag | Wellenlaengenselektiver photodetektor |
| US5270858A (en) * | 1990-10-11 | 1993-12-14 | Viratec Thin Films Inc | D.C. reactively sputtered antireflection coatings |
| WO1992007386A1 (en) * | 1990-10-15 | 1992-04-30 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacture |
| AU662360B2 (en) * | 1991-10-22 | 1995-08-31 | Canon Kabushiki Kaisha | Photovoltaic device |
| US5221854A (en) * | 1991-11-18 | 1993-06-22 | United Solar Systems Corporation | Protective layer for the back reflector of a photovoltaic device |
| US5291055A (en) * | 1992-01-28 | 1994-03-01 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Resonant infrared detector with substantially unit quantum efficiency |
| JP2974485B2 (ja) * | 1992-02-05 | 1999-11-10 | キヤノン株式会社 | 光起電力素子の製造法 |
| US5230746A (en) * | 1992-03-03 | 1993-07-27 | Amoco Corporation | Photovoltaic device having enhanced rear reflecting contact |
| US5261970A (en) * | 1992-04-08 | 1993-11-16 | Sverdrup Technology, Inc. | Optoelectronic and photovoltaic devices with low-reflectance surfaces |
| US5296045A (en) * | 1992-09-04 | 1994-03-22 | United Solar Systems Corporation | Composite back reflector for photovoltaic device |
| JP2771414B2 (ja) | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
| JP3006701B2 (ja) | 1992-12-28 | 2000-02-07 | キヤノン株式会社 | 薄膜半導体太陽電池 |
| US5593549A (en) * | 1993-06-02 | 1997-01-14 | Stirbl; Robert C. | Method for changing solar energy distribution |
| US5650362A (en) * | 1993-11-04 | 1997-07-22 | Fuji Xerox Co. | Oriented conductive film and process for preparing the same |
| US5668050A (en) * | 1994-04-28 | 1997-09-16 | Canon Kabushiki Kaisha | Solar cell manufacturing method |
| JPH07326783A (ja) * | 1994-05-30 | 1995-12-12 | Canon Inc | 光起電力素子の形成方法及びそれに用いる薄膜製造装置 |
| JPH0864848A (ja) * | 1994-08-23 | 1996-03-08 | Canon Inc | 光電気変換装置、反射防止膜及び電極基板 |
| US6020553A (en) * | 1994-10-09 | 2000-02-01 | Yeda Research And Development Co., Ltd. | Photovoltaic cell system and an optical structure therefor |
| JP3017422B2 (ja) * | 1995-09-11 | 2000-03-06 | キヤノン株式会社 | 光起電力素子アレー及びその製造方法 |
| US5986204A (en) * | 1996-03-21 | 1999-11-16 | Canon Kabushiki Kaisha | Photovoltaic cell |
| US6172296B1 (en) * | 1996-05-17 | 2001-01-09 | Canon Kabushiki Kaisha | Photovoltaic cell |
| JPH10178193A (ja) * | 1996-12-18 | 1998-06-30 | Canon Inc | 光起電力素子の製造方法 |
| US5998730A (en) * | 1997-05-13 | 1999-12-07 | Canon Kabushiki Kaisha | Production method for deposited film, production method for photoelectric conversion element, production apparatus for deposited film, production apparatus for photoelectric conversion element |
| JPH10335684A (ja) * | 1997-05-30 | 1998-12-18 | Canon Inc | 光電気変換体の製造方法 |
| US6222117B1 (en) | 1998-01-05 | 2001-04-24 | Canon Kabushiki Kaisha | Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus |
| JPH11302843A (ja) * | 1998-02-17 | 1999-11-02 | Canon Inc | 酸化亜鉛膜の堆積方法および堆積装置、光起電力素子 |
| KR100414132B1 (ko) | 1998-07-02 | 2004-01-07 | 아스트로파워 | 다결정성 실리콘 박막, 다결정성 실리콘 박막 전자 디바이스, 집적 태양 전지, 태양전지 모듈 및 그 제조방법 |
| US6468828B1 (en) | 1998-07-14 | 2002-10-22 | Sky Solar L.L.C. | Method of manufacturing lightweight, high efficiency photovoltaic module |
| JP2000294818A (ja) | 1999-04-05 | 2000-10-20 | Sony Corp | 薄膜半導体素子およびその製造方法 |
| TW437104B (en) * | 1999-05-25 | 2001-05-28 | Wang Tien Yang | Semiconductor light-emitting device and method for manufacturing the same |
| JP2001345460A (ja) * | 2000-03-29 | 2001-12-14 | Sanyo Electric Co Ltd | 太陽電池装置 |
| US6858462B2 (en) * | 2000-04-11 | 2005-02-22 | Gratings, Inc. | Enhanced light absorption of solar cells and photodetectors by diffraction |
| US6587097B1 (en) | 2000-11-28 | 2003-07-01 | 3M Innovative Properties Co. | Display system |
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| JP2003013218A (ja) * | 2001-06-29 | 2003-01-15 | Canon Inc | 長時間スパッタリング方法 |
| FR2832706B1 (fr) * | 2001-11-28 | 2004-07-23 | Saint Gobain | Substrat transparent muni d'une electrode |
| US20050067667A1 (en) * | 2003-09-26 | 2005-03-31 | Goushcha Alexander O. | Fast silicon photodiodes with high back surface reflectance in a wavelength range close to the bandgap |
| DE102005013537A1 (de) * | 2004-03-24 | 2005-10-20 | Sharp Kk | Fotoelektrischer Wandler und Herstellverfahren für einen solchen |
| AU2007302616B2 (en) * | 2006-09-28 | 2012-11-22 | Trac Group Holdings Ltd | Solar energy harvesting apparatus |
| US20080223438A1 (en) * | 2006-10-19 | 2008-09-18 | Intematix Corporation | Systems and methods for improving luminescent concentrator performance |
| EP1993142A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung |
| KR101244027B1 (ko) * | 2008-07-08 | 2013-03-14 | 시너스 테크놀리지, 인코포레이티드 | 플렉서블 태양전지 제조방법 |
| TW201005963A (en) * | 2008-07-17 | 2010-02-01 | Big Sun Energy Technology Inc | Solar cell with high photon utilization and method of manufacturing the same |
| US8679959B2 (en) * | 2008-09-03 | 2014-03-25 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
| KR100993513B1 (ko) * | 2008-10-06 | 2010-11-10 | 엘지전자 주식회사 | 태양전지 |
| WO2010048547A2 (en) * | 2008-10-23 | 2010-04-29 | Alta Devices, Inc. | Photovoltaic device with increased light trapping |
| WO2010048543A2 (en) * | 2008-10-23 | 2010-04-29 | Alta Devices, Inc. | Thin absorber layer of a photovoltaic device |
| CN102257637A (zh) | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | 光伏器件 |
| US20120104460A1 (en) | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
| TW201021229A (en) * | 2008-11-21 | 2010-06-01 | Ind Tech Res Inst | Solar cell having reflective structure |
| EP2190033A1 (de) | 2008-11-24 | 2010-05-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Tandemsolarzelle aus kristallinem Silizium und kristallinem Siliziumcarbid sowie Verfahren zu dessen Herstellung |
| FR2939240B1 (fr) * | 2008-12-03 | 2011-02-18 | Saint Gobain | Element en couches et dispositif photovoltaique comprenant un tel element |
| JP5470633B2 (ja) * | 2008-12-11 | 2014-04-16 | 国立大学法人東北大学 | 光電変換素子及び太陽電池 |
| US20100186816A1 (en) * | 2009-01-23 | 2010-07-29 | Samsung Electronics Co., Ltd. | Solar cell |
| WO2010087785A1 (en) * | 2009-02-02 | 2010-08-05 | Agency For Science, Technology And Research | Thin film solar cell structure |
| US8207051B2 (en) | 2009-04-28 | 2012-06-26 | Sionyx, Inc. | Semiconductor surface modification |
| FR2945159B1 (fr) * | 2009-04-29 | 2016-04-01 | Horiba Jobin Yvon Sas | Reseau de diffraction metallique en reflexion a haute tenue au flux en regime femtoseconde, systeme comprenant un tel reseau et procede d'amelioration du seuil d'endommagement d'un reseau de diffraction metallique |
| US20110121424A1 (en) * | 2009-04-30 | 2011-05-26 | James Carey | Low oxygen content semiconductor material for surface enhanced photonic devices and associated methods |
| US20100288352A1 (en) * | 2009-05-12 | 2010-11-18 | Lightwave Power, Inc. | Integrated solar cell nanoarray layers and light concentrating device |
| TWI394285B (zh) * | 2009-06-08 | 2013-04-21 | Univ Tatung | 光電轉換裝置及其製法 |
| DE102009029944A1 (de) * | 2009-06-19 | 2010-12-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle und Verfahren zu deren Herstellung |
| US8062920B2 (en) * | 2009-07-24 | 2011-11-22 | Ovshinsky Innovation, Llc | Method of manufacturing a photovoltaic device |
| WO2011022687A2 (en) * | 2009-08-20 | 2011-02-24 | Sionyx, Inc. | Laser processed heterojunction photovoltaic devices and associated methods |
| US8476598B1 (en) | 2009-08-31 | 2013-07-02 | Sionyx, Inc. | Electromagnetic radiation imaging devices and associated methods |
| US8309389B1 (en) | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US8476681B2 (en) | 2009-09-17 | 2013-07-02 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| KR102234065B1 (ko) | 2009-09-17 | 2021-03-31 | 사이오닉스, 엘엘씨 | 감광성 이미징 장치 및 이와 관련된 방법 |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
| US20110095387A1 (en) * | 2009-10-22 | 2011-04-28 | James Carey | Semiconductor devices having an enhanced absorption region and associated methods |
| US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
| US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
| US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
| US20150380576A1 (en) * | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
| US8212250B2 (en) | 2009-12-10 | 2012-07-03 | Leonard Forbes | Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors |
| US8120027B2 (en) * | 2009-12-10 | 2012-02-21 | Leonard Forbes | Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| FR2959872B1 (fr) * | 2010-05-05 | 2013-03-15 | Commissariat Energie Atomique | Cellule photovoltaique a face arriere structuree et procede de fabrication associe. |
| US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
| US20120024365A1 (en) * | 2010-07-27 | 2012-02-02 | Alliance For Sustainable Energy, Llc | Solar energy systems |
| US9893223B2 (en) | 2010-11-16 | 2018-02-13 | Suncore Photovoltaics, Inc. | Solar electricity generation system |
| WO2012088319A2 (en) | 2010-12-21 | 2012-06-28 | Sionyx, Inc. | Semiconductor devices having reduced substrate damage and associated methods |
| US20120211065A1 (en) * | 2011-02-21 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| KR102170984B1 (ko) | 2011-03-10 | 2020-10-29 | 사이오닉스, 엘엘씨 | 3차원 센서, 시스템, 및 관련 방법 |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
| US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
| US20130167903A1 (en) * | 2011-11-14 | 2013-07-04 | Prism Solar Technologies Incorporated | Encapsulated solar energy concentrator |
| US20130167933A1 (en) * | 2011-12-30 | 2013-07-04 | Syracuse University | Intrinsic oxide buffer layers for solar cells |
| US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| CN103066134B (zh) * | 2012-12-20 | 2016-02-10 | 河南大学 | 一种薄膜太阳能电池背反电极及其制备方法 |
| US10514509B2 (en) * | 2013-01-10 | 2019-12-24 | The Regents Of The University Of Colorado, A Body Corporate | Method and apparatus for optical waveguide-to-semiconductor coupling and optical vias for monolithically integrated electronic and photonic circuits |
| KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US9337229B2 (en) | 2013-12-26 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
| JP2016178234A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 半導体受光デバイス |
| US10983275B2 (en) | 2016-03-21 | 2021-04-20 | The Regents Of The University Of Colorado, A Body Corporate | Method and apparatus for optical waveguide-to-semiconductor coupling for integrated photonic circuits |
| EP4224537A1 (en) * | 2022-02-02 | 2023-08-09 | Airbus Defence and Space GmbH | A dual junction solar cell with light management features for space use, a photovoltaic assembly for space use including a dual junction solar cell, a satellite including the photovoltaic assembly and a method for manufacturing a dual junction solar cell for space use |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50123286A (cg-RX-API-DMAC10.html) * | 1974-03-11 | 1975-09-27 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3569997A (en) * | 1967-07-13 | 1971-03-09 | Inventors And Investors Inc | Photoelectric microcircuit components monolythically integrated with zone plate optics |
| US3487223A (en) * | 1968-07-10 | 1969-12-30 | Us Air Force | Multiple internal reflection structure in a silicon detector which is obtained by sandblasting |
| US3873829A (en) * | 1970-05-29 | 1975-03-25 | Philips Corp | Photo cathode with means provided which produce a repeated total reflection of the incident light without interference phenomena |
| FR2226754B1 (cg-RX-API-DMAC10.html) * | 1973-04-20 | 1975-08-22 | Thomson Csf | |
| US3971672A (en) * | 1975-02-03 | 1976-07-27 | D. H. Baldwin Company | Light diffuser for photovoltaic cell |
| US4053327A (en) * | 1975-09-24 | 1977-10-11 | Communications Satellite Corporation | Light concentrating solar cell cover |
| US4252865A (en) * | 1978-05-24 | 1981-02-24 | National Patent Development Corporation | Highly solar-energy absorbing device and method of making the same |
| US4153813A (en) * | 1978-06-19 | 1979-05-08 | Atlantic Richfield Company | Luminescent solar collector |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| US4204881A (en) * | 1978-10-02 | 1980-05-27 | Mcgrew Stephen P | Solar power system |
| JPS6041878B2 (ja) * | 1979-02-14 | 1985-09-19 | シャープ株式会社 | 薄膜太陽電池装置 |
| JPS55125680A (en) * | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
| US4328390A (en) * | 1979-09-17 | 1982-05-04 | The University Of Delaware | Thin film photovoltaic cell |
| US4246042A (en) * | 1980-02-13 | 1981-01-20 | Science Applications, Inc. | Fixed solar energy concentrator |
| DK79780A (da) * | 1980-02-25 | 1981-08-26 | Elektronikcentralen | Solcelle med et halvlederkrystal og med en belyst overflade batteri af solceller og fremgangsmaade til fremstilling af samme |
| DE3016498A1 (de) * | 1980-04-29 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Lichtempfindliche halbleiterbauelemente |
| DE3023165A1 (de) * | 1980-06-20 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium |
| US4289920A (en) * | 1980-06-23 | 1981-09-15 | International Business Machines Corporation | Multiple bandgap solar cell on transparent substrate |
| DE3140974C2 (de) * | 1981-10-15 | 1986-11-20 | Viktor Voskanovič Afian | Fotoelektrischer Sonnenmodul |
-
1982
- 1982-03-03 US US06/354,285 patent/US4419533A/en not_active Expired - Lifetime
-
1983
- 1983-01-31 IL IL67794A patent/IL67794A/xx unknown
- 1983-02-04 ZA ZA83748A patent/ZA83748B/xx unknown
- 1983-02-14 GB GB08304033A patent/GB2116364B/en not_active Expired
- 1983-02-14 IE IE294/83A patent/IE54408B1/en not_active IP Right Cessation
- 1983-02-15 CA CA000421646A patent/CA1187970A/en not_active Expired
- 1983-02-16 FR FR8302480A patent/FR2522880A1/fr not_active Withdrawn
- 1983-02-16 AU AU11494/83A patent/AU543213B2/en not_active Ceased
- 1983-02-17 NL NL8300603A patent/NL8300603A/nl not_active Application Discontinuation
- 1983-02-18 IT IT47739/83A patent/IT1167617B/it active
- 1983-02-21 PH PH28546A patent/PH19299A/en unknown
- 1983-02-22 DE DE19833306148 patent/DE3306148A1/de not_active Withdrawn
- 1983-02-24 BR BR8300902A patent/BR8300902A/pt unknown
- 1983-02-25 JP JP58030683A patent/JPS58159383A/ja active Pending
- 1983-02-25 IN IN236/CAL/83A patent/IN157618B/en unknown
- 1983-02-25 SE SE8301051A patent/SE454225B/sv not_active IP Right Cessation
- 1983-03-01 EG EG137/83A patent/EG15060A/xx active
- 1983-03-02 GR GR70656A patent/GR78799B/el unknown
- 1983-03-02 ES ES520247A patent/ES8403667A1/es not_active Expired
- 1983-03-03 KR KR1019830000861A patent/KR840004309A/ko not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50123286A (cg-RX-API-DMAC10.html) * | 1974-03-11 | 1975-09-27 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399477A (ja) * | 1989-09-12 | 1991-04-24 | Canon Inc | 太陽電池 |
| US5244509A (en) * | 1990-08-09 | 1993-09-14 | Canon Kabushiki Kaisha | Substrate having an uneven surface for solar cell and a solar cell provided with said substrate |
| US5284525A (en) * | 1990-12-13 | 1994-02-08 | Canon Kabushiki Kaisha | Solar cell |
| US5282902A (en) * | 1991-05-09 | 1994-02-01 | Canon Kabushiki Kaisha | Solar cell provided with a light reflection layer |
| JP2010538448A (ja) * | 2007-08-31 | 2010-12-09 | アルセロールミタル−ステインレス アンド ニッケル アロイズ | 結晶学的にテクスチャード加工した金属基体、結晶学的にテクスチャード加工した装置、そのような装置を含む太陽電池モジュールおよび薄層付着方法 |
| JP2013539595A (ja) * | 2010-07-06 | 2013-10-24 | シンシリコン・コーポレーション | 光電池モジュール及び電極拡散層を持つ光電池モジュールの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IE54408B1 (en) | 1989-09-27 |
| DE3306148A1 (de) | 1983-09-15 |
| GB2116364B (en) | 1985-10-23 |
| IE830294L (en) | 1983-09-03 |
| PH19299A (en) | 1986-03-05 |
| IT1167617B (it) | 1987-05-13 |
| GB8304033D0 (en) | 1983-03-16 |
| SE454225B (sv) | 1988-04-11 |
| IL67794A (en) | 1986-01-31 |
| ZA83748B (en) | 1983-11-30 |
| IN157618B (cg-RX-API-DMAC10.html) | 1986-05-03 |
| SE8301051L (sv) | 1983-09-04 |
| ES520247A0 (es) | 1984-03-16 |
| BR8300902A (pt) | 1983-11-16 |
| AU1149483A (en) | 1983-09-08 |
| GR78799B (cg-RX-API-DMAC10.html) | 1984-10-02 |
| IL67794A0 (en) | 1983-05-15 |
| FR2522880A1 (fr) | 1983-09-09 |
| NL8300603A (nl) | 1983-10-03 |
| IT8347739A1 (it) | 1984-08-18 |
| ES8403667A1 (es) | 1984-03-16 |
| US4419533A (en) | 1983-12-06 |
| GB2116364A (en) | 1983-09-21 |
| SE8301051D0 (sv) | 1983-02-25 |
| CA1187970A (en) | 1985-05-28 |
| EG15060A (en) | 1985-12-31 |
| KR840004309A (ko) | 1984-10-10 |
| AU543213B2 (en) | 1985-04-04 |
| IT8347739A0 (it) | 1983-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58159383A (ja) | 全内反射を生じる入射光線指向装置を有する改善された光起電力素子 | |
| US4433202A (en) | Thin film solar cell | |
| US4471155A (en) | Narrow band gap photovoltaic devices with enhanced open circuit voltage | |
| US4598164A (en) | Solar cell made from amorphous superlattice material | |
| JPS58199710A (ja) | 改良された広いバンドギヤツプのp型無定形の酸素とのシリコン合金およびその利用デバイス | |
| JPH0434314B2 (cg-RX-API-DMAC10.html) | ||
| JPS5990923A (ja) | マイクロ波エネルギを用いて層状アモルフアス半導体合金を製造する方法及び装置 | |
| CN102301490A (zh) | 光生伏打模块和制造具有级联半导体层堆叠的光生伏打模块的方法 | |
| JPH04267568A (ja) | 光起電力素子 | |
| US4591893A (en) | Photoelectric conversion device utilizing fibrous silicon | |
| JPH07123111B2 (ja) | 半導体膜の製造方法及び光起電力構造体の製造方法 | |
| CA1245330A (en) | Back reflector system and devices utilizing same | |
| JP2005347444A (ja) | 光起電力素子 | |
| KR810001314B1 (ko) | 비결정 실리콘 활성영역을 갖는 반도체 장치 | |
| JP2724892B2 (ja) | アモルファスシリコン系pin型光電変換素子 | |
| JP2757896B2 (ja) | 光起電力装置 | |
| JPH04266067A (ja) | 光起電力素子 | |
| JP2004095881A (ja) | 薄膜太陽電池 | |
| JPH04192373A (ja) | 光起電力素子 | |
| JPH065895A (ja) | 太陽電池 | |
| JP3046644B2 (ja) | 光起電力素子の製造方法 | |
| JP2936032B2 (ja) | 太陽電池 | |
| JP2784821B2 (ja) | 光起電力素子 | |
| KR101389540B1 (ko) | 태양 전지 및 그 제조 방법 | |
| JPH09191119A (ja) | 光起電力素子の製造方法 |