JPS58158438U - エピタキシヤル成長装置のコイル保持装置 - Google Patents

エピタキシヤル成長装置のコイル保持装置

Info

Publication number
JPS58158438U
JPS58158438U JP1982055268U JP5526882U JPS58158438U JP S58158438 U JPS58158438 U JP S58158438U JP 1982055268 U JP1982055268 U JP 1982055268U JP 5526882 U JP5526882 U JP 5526882U JP S58158438 U JPS58158438 U JP S58158438U
Authority
JP
Japan
Prior art keywords
coil
holding device
epitaxial growth
frequency heating
coil support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1982055268U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0356042Y2 (enExample
Inventor
吉三 小宮山
宮崎　美彦
石川　武敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP1982055268U priority Critical patent/JPS58158438U/ja
Priority to GB08309427A priority patent/GB2120279B/en
Priority to KR1019830001556A priority patent/KR840004824A/ko
Priority to DE19833313695 priority patent/DE3313695A1/de
Publication of JPS58158438U publication Critical patent/JPS58158438U/ja
Application granted granted Critical
Publication of JPH0356042Y2 publication Critical patent/JPH0356042Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP1982055268U 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置 Granted JPS58158438U (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置
GB08309427A GB2120279B (en) 1982-04-16 1983-04-07 Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers
KR1019830001556A KR840004824A (ko) 1982-04-16 1983-04-14 반도체 웨이퍼의 에피택셜 생장장치
DE19833313695 DE3313695A1 (de) 1982-04-16 1983-04-15 Geraet zum epitaxialen aufwachsen von schichten auf halbleitersubstraten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置

Publications (2)

Publication Number Publication Date
JPS58158438U true JPS58158438U (ja) 1983-10-22
JPH0356042Y2 JPH0356042Y2 (enExample) 1991-12-16

Family

ID=12993852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982055268U Granted JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置

Country Status (4)

Country Link
JP (1) JPS58158438U (enExample)
KR (1) KR840004824A (enExample)
DE (1) DE3313695A1 (enExample)
GB (1) GB2120279B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6436796B1 (en) 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921091B1 (enExample) * 1970-08-10 1974-05-29
JPS523647B2 (enExample) * 1972-10-24 1977-01-29
US3887411A (en) * 1973-12-20 1975-06-03 Ford Motor Co Making a triple density article of silicon nitride
GB1522705A (en) * 1974-11-11 1978-08-23 Asea Ab Method of manufacturing bodies of silicon nitride
US4119689A (en) * 1977-01-03 1978-10-10 General Electric Company Sintering of silicon nitride using Be additive
DE2800174A1 (de) * 1978-01-03 1979-07-12 Max Planck Gesellschaft Verfahren zum sintern von siliciumnitrid-formkoerpern

Also Published As

Publication number Publication date
GB2120279A (en) 1983-11-30
GB2120279B (en) 1986-09-10
JPH0356042Y2 (enExample) 1991-12-16
DE3313695A1 (de) 1983-10-27
DE3313695C2 (enExample) 1987-10-22
KR840004824A (ko) 1984-10-24

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