GB2120279B - Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers - Google Patents

Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers

Info

Publication number
GB2120279B
GB2120279B GB08309427A GB8309427A GB2120279B GB 2120279 B GB2120279 B GB 2120279B GB 08309427 A GB08309427 A GB 08309427A GB 8309427 A GB8309427 A GB 8309427A GB 2120279 B GB2120279 B GB 2120279B
Authority
GB
United Kingdom
Prior art keywords
support
induction heating
heating coil
semiconductor wafers
growing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08309427A
Other languages
English (en)
Other versions
GB2120279A (en
Inventor
Yoshizo Komiyama
Yosihiko Miyazaki
Taketoshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Publication of GB2120279A publication Critical patent/GB2120279A/en
Application granted granted Critical
Publication of GB2120279B publication Critical patent/GB2120279B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
GB08309427A 1982-04-16 1983-04-07 Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers Expired GB2120279B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置

Publications (2)

Publication Number Publication Date
GB2120279A GB2120279A (en) 1983-11-30
GB2120279B true GB2120279B (en) 1986-09-10

Family

ID=12993852

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08309427A Expired GB2120279B (en) 1982-04-16 1983-04-07 Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers

Country Status (4)

Country Link
JP (1) JPS58158438U (enExample)
KR (1) KR840004824A (enExample)
DE (1) DE3313695A1 (enExample)
GB (1) GB2120279B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6436796B1 (en) * 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921091B1 (enExample) * 1970-08-10 1974-05-29
JPS523647B2 (enExample) * 1972-10-24 1977-01-29
US3887411A (en) * 1973-12-20 1975-06-03 Ford Motor Co Making a triple density article of silicon nitride
GB1522705A (en) * 1974-11-11 1978-08-23 Asea Ab Method of manufacturing bodies of silicon nitride
US4119689A (en) * 1977-01-03 1978-10-10 General Electric Company Sintering of silicon nitride using Be additive
DE2800174A1 (de) * 1978-01-03 1979-07-12 Max Planck Gesellschaft Verfahren zum sintern von siliciumnitrid-formkoerpern

Also Published As

Publication number Publication date
JPS58158438U (ja) 1983-10-22
KR840004824A (ko) 1984-10-24
DE3313695A1 (de) 1983-10-27
JPH0356042Y2 (enExample) 1991-12-16
GB2120279A (en) 1983-11-30
DE3313695C2 (enExample) 1987-10-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19960407