JPH0356042Y2 - - Google Patents

Info

Publication number
JPH0356042Y2
JPH0356042Y2 JP1982055268U JP5526882U JPH0356042Y2 JP H0356042 Y2 JPH0356042 Y2 JP H0356042Y2 JP 1982055268 U JP1982055268 U JP 1982055268U JP 5526882 U JP5526882 U JP 5526882U JP H0356042 Y2 JPH0356042 Y2 JP H0356042Y2
Authority
JP
Japan
Prior art keywords
coil
susceptor
coil support
support
frequency heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982055268U
Other languages
English (en)
Japanese (ja)
Other versions
JPS58158438U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1982055268U priority Critical patent/JPS58158438U/ja
Priority to GB08309427A priority patent/GB2120279B/en
Priority to KR1019830001556A priority patent/KR840004824A/ko
Priority to DE19833313695 priority patent/DE3313695A1/de
Publication of JPS58158438U publication Critical patent/JPS58158438U/ja
Application granted granted Critical
Publication of JPH0356042Y2 publication Critical patent/JPH0356042Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H10P14/20—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP1982055268U 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置 Granted JPS58158438U (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置
GB08309427A GB2120279B (en) 1982-04-16 1983-04-07 Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers
KR1019830001556A KR840004824A (ko) 1982-04-16 1983-04-14 반도체 웨이퍼의 에피택셜 생장장치
DE19833313695 DE3313695A1 (de) 1982-04-16 1983-04-15 Geraet zum epitaxialen aufwachsen von schichten auf halbleitersubstraten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置

Publications (2)

Publication Number Publication Date
JPS58158438U JPS58158438U (ja) 1983-10-22
JPH0356042Y2 true JPH0356042Y2 (enExample) 1991-12-16

Family

ID=12993852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982055268U Granted JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置

Country Status (4)

Country Link
JP (1) JPS58158438U (enExample)
KR (1) KR840004824A (enExample)
DE (1) DE3313695A1 (enExample)
GB (1) GB2120279B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6436796B1 (en) 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921091B1 (enExample) * 1970-08-10 1974-05-29
JPS523647B2 (enExample) * 1972-10-24 1977-01-29
US3887411A (en) * 1973-12-20 1975-06-03 Ford Motor Co Making a triple density article of silicon nitride
GB1522705A (en) * 1974-11-11 1978-08-23 Asea Ab Method of manufacturing bodies of silicon nitride
US4119689A (en) * 1977-01-03 1978-10-10 General Electric Company Sintering of silicon nitride using Be additive
DE2800174A1 (de) * 1978-01-03 1979-07-12 Max Planck Gesellschaft Verfahren zum sintern von siliciumnitrid-formkoerpern

Also Published As

Publication number Publication date
KR840004824A (ko) 1984-10-24
DE3313695A1 (de) 1983-10-27
DE3313695C2 (enExample) 1987-10-22
GB2120279A (en) 1983-11-30
JPS58158438U (ja) 1983-10-22
GB2120279B (en) 1986-09-10

Similar Documents

Publication Publication Date Title
JPH0834187B2 (ja) サセプタ
JPS6312128A (ja) バレル型気相成長装置
JPH0356042Y2 (enExample)
US4348981A (en) Vertical type vapor-phase growth apparatus
JPH0356043Y2 (enExample)
JPH0864544A (ja) 気相成長方法
JPH0756863B2 (ja) 気相成長装置
JPH037752B2 (enExample)
JPS59112614A (ja) 気相成長装置
JP3184550B2 (ja) 気相成長方法及びその装置
JPS63270398A (ja) 炭化珪素単結晶の成長方法
RU222432U1 (ru) Реактор для получения эпитаксиальных слоев карбида кремния на кремниевой подложке
JPS6058613A (ja) エピタキシャル装置
JPH1140503A (ja) 半導体製造方法および装置
JPH04186823A (ja) 気相成長装置
US20250283247A1 (en) Seed unit and apparatus for growing a bulk sic single crystal
JPH01140816U (enExample)
JPH06349748A (ja) 半導体気相成長装置
JP2986112B2 (ja) 熱処理装置
JPH0666266B2 (ja) バレル型気相成長装置
JPS6040605Y2 (ja) 気相成長装置のノズル高さ調整装置
JPS6245690B2 (enExample)
JPH02146165U (enExample)
JPH0158930U (enExample)
JPH03291916A (ja) サセプタ