JPS58147157A - 不揮発性半導体メモリ装置 - Google Patents

不揮発性半導体メモリ装置

Info

Publication number
JPS58147157A
JPS58147157A JP57029964A JP2996482A JPS58147157A JP S58147157 A JPS58147157 A JP S58147157A JP 57029964 A JP57029964 A JP 57029964A JP 2996482 A JP2996482 A JP 2996482A JP S58147157 A JPS58147157 A JP S58147157A
Authority
JP
Japan
Prior art keywords
control
floating
darts
potential
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57029964A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035674B2 (enrdf_load_stackoverflow
Inventor
Katsuhiko Hieda
克彦 稗田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57029964A priority Critical patent/JPS58147157A/ja
Publication of JPS58147157A publication Critical patent/JPS58147157A/ja
Publication of JPH035674B2 publication Critical patent/JPH035674B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP57029964A 1982-02-26 1982-02-26 不揮発性半導体メモリ装置 Granted JPS58147157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029964A JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029964A JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS58147157A true JPS58147157A (ja) 1983-09-01
JPH035674B2 JPH035674B2 (enrdf_load_stackoverflow) 1991-01-28

Family

ID=12290647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029964A Granted JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS58147157A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639980A (ja) * 1986-06-30 1988-01-16 Toshiba Corp 不揮発性半導体記憶装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639980A (ja) * 1986-06-30 1988-01-16 Toshiba Corp 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPH035674B2 (enrdf_load_stackoverflow) 1991-01-28

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