JPH035674B2 - - Google Patents

Info

Publication number
JPH035674B2
JPH035674B2 JP57029964A JP2996482A JPH035674B2 JP H035674 B2 JPH035674 B2 JP H035674B2 JP 57029964 A JP57029964 A JP 57029964A JP 2996482 A JP2996482 A JP 2996482A JP H035674 B2 JPH035674 B2 JP H035674B2
Authority
JP
Japan
Prior art keywords
control gate
gate
floating gate
source
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57029964A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147157A (ja
Inventor
Katsuhiko Hieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57029964A priority Critical patent/JPS58147157A/ja
Publication of JPS58147157A publication Critical patent/JPS58147157A/ja
Publication of JPH035674B2 publication Critical patent/JPH035674B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP57029964A 1982-02-26 1982-02-26 不揮発性半導体メモリ装置 Granted JPS58147157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029964A JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029964A JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS58147157A JPS58147157A (ja) 1983-09-01
JPH035674B2 true JPH035674B2 (enrdf_load_stackoverflow) 1991-01-28

Family

ID=12290647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029964A Granted JPS58147157A (ja) 1982-02-26 1982-02-26 不揮発性半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS58147157A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644628B2 (ja) * 1986-06-30 1994-06-08 株式会社東芝 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPS58147157A (ja) 1983-09-01

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