JPS58121679A - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置

Info

Publication number
JPS58121679A
JPS58121679A JP57003584A JP358482A JPS58121679A JP S58121679 A JPS58121679 A JP S58121679A JP 57003584 A JP57003584 A JP 57003584A JP 358482 A JP358482 A JP 358482A JP S58121679 A JPS58121679 A JP S58121679A
Authority
JP
Japan
Prior art keywords
impurity diffusion
source
diffusion layer
drain
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57003584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0480544B2 (enrdf_load_stackoverflow
Inventor
Ryuichi Matsuo
龍一 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11561497&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS58121679(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57003584A priority Critical patent/JPS58121679A/ja
Publication of JPS58121679A publication Critical patent/JPS58121679A/ja
Publication of JPH0480544B2 publication Critical patent/JPH0480544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57003584A 1982-01-12 1982-01-12 半導体不揮発性記憶装置 Granted JPS58121679A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP23801193A Division JPH0783067B2 (ja) 1993-09-24 1993-09-24 半導体不揮発性記憶装置の書き込み及び消去方法

Publications (2)

Publication Number Publication Date
JPS58121679A true JPS58121679A (ja) 1983-07-20
JPH0480544B2 JPH0480544B2 (enrdf_load_stackoverflow) 1992-12-18

Family

ID=11561497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003584A Granted JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS58121679A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPH01211979A (ja) * 1988-02-19 1989-08-25 Toshiba Corp 不揮発性半導体メモリ
JPH0685274A (ja) * 1992-03-23 1994-03-25 Internatl Business Mach Corp <Ibm> トレンチ型ｅｅｐｒｏｍ
JPH0697457A (ja) * 1992-07-31 1994-04-08 Samsung Electron Co Ltd 不揮発性メモリ装置とその製造方法
JPH06196718A (ja) * 1993-10-12 1994-07-15 Toshiba Corp 不揮発性半導体記憶装置
JPH07135264A (ja) * 1993-06-28 1995-05-23 Nec Corp 半導体集積回路装置の製造方法
US5424979A (en) * 1992-10-02 1995-06-13 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell
JPH098154A (ja) * 1995-06-15 1997-01-10 Nec Corp 半導体メモリ装置及びその製造方法
JPH09510051A (ja) * 1994-03-03 1997-10-07 ローム・コーポレーション ファウラーノルドハイムプログラミング及び消去を利用する、低電圧単一トランジスタ型フラッシュｅｅｐｒｏｍセル
US6949790B2 (en) 2001-09-19 2005-09-27 Ricoh Company, Ltd. Semiconductor device and its manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPH01211979A (ja) * 1988-02-19 1989-08-25 Toshiba Corp 不揮発性半導体メモリ
JPH0685274A (ja) * 1992-03-23 1994-03-25 Internatl Business Mach Corp <Ibm> トレンチ型ｅｅｐｒｏｍ
JPH0697457A (ja) * 1992-07-31 1994-04-08 Samsung Electron Co Ltd 不揮発性メモリ装置とその製造方法
US5424979A (en) * 1992-10-02 1995-06-13 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell
JPH07135264A (ja) * 1993-06-28 1995-05-23 Nec Corp 半導体集積回路装置の製造方法
JPH06196718A (ja) * 1993-10-12 1994-07-15 Toshiba Corp 不揮発性半導体記憶装置
JPH09510051A (ja) * 1994-03-03 1997-10-07 ローム・コーポレーション ファウラーノルドハイムプログラミング及び消去を利用する、低電圧単一トランジスタ型フラッシュｅｅｐｒｏｍセル
JPH098154A (ja) * 1995-06-15 1997-01-10 Nec Corp 半導体メモリ装置及びその製造方法
US6949790B2 (en) 2001-09-19 2005-09-27 Ricoh Company, Ltd. Semiconductor device and its manufacturing method
US7314797B2 (en) 2001-09-19 2008-01-01 Ricoh Company, Ltd. Semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPH0480544B2 (enrdf_load_stackoverflow) 1992-12-18

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