JPH0480544B2 - - Google Patents

Info

Publication number
JPH0480544B2
JPH0480544B2 JP57003584A JP358482A JPH0480544B2 JP H0480544 B2 JPH0480544 B2 JP H0480544B2 JP 57003584 A JP57003584 A JP 57003584A JP 358482 A JP358482 A JP 358482A JP H0480544 B2 JPH0480544 B2 JP H0480544B2
Authority
JP
Japan
Prior art keywords
impurity diffusion
diffusion layer
floating gate
gate conductor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57003584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58121679A (ja
Inventor
Ryuichi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11561497&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0480544(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57003584A priority Critical patent/JPS58121679A/ja
Publication of JPS58121679A publication Critical patent/JPS58121679A/ja
Publication of JPH0480544B2 publication Critical patent/JPH0480544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57003584A 1982-01-12 1982-01-12 半導体不揮発性記憶装置 Granted JPS58121679A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP23801193A Division JPH0783067B2 (ja) 1993-09-24 1993-09-24 半導体不揮発性記憶装置の書き込み及び消去方法

Publications (2)

Publication Number Publication Date
JPS58121679A JPS58121679A (ja) 1983-07-20
JPH0480544B2 true JPH0480544B2 (enrdf_load_stackoverflow) 1992-12-18

Family

ID=11561497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003584A Granted JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS58121679A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPH01211979A (ja) * 1988-02-19 1989-08-25 Toshiba Corp 不揮発性半導体メモリ
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
KR960009995B1 (ko) * 1992-07-31 1996-07-25 삼성전자 주식회사 반도체 장치의 제조 방법 및 그 구조
US5424979A (en) * 1992-10-02 1995-06-13 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell
JP2536413B2 (ja) * 1993-06-28 1996-09-18 日本電気株式会社 半導体集積回路装置の製造方法
JP2573464B2 (ja) * 1993-10-12 1997-01-22 株式会社東芝 不揮発性半導体記憶装置
DE69523743T2 (de) * 1994-03-03 2002-08-01 Rohm Corp., San Jose Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung
JP2885134B2 (ja) * 1995-06-15 1999-04-19 日本電気株式会社 半導体メモリ装置の製造方法
JP4605956B2 (ja) 2001-09-19 2011-01-05 株式会社リコー 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
CH633123A5 (en) * 1979-08-24 1982-11-15 Centre Electron Horloger Electrically reprogrammable non-volatile memory element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法

Also Published As

Publication number Publication date
JPS58121679A (ja) 1983-07-20

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