JPH0480544B2 - - Google Patents

Info

Publication number
JPH0480544B2
JPH0480544B2 JP57003584A JP358482A JPH0480544B2 JP H0480544 B2 JPH0480544 B2 JP H0480544B2 JP 57003584 A JP57003584 A JP 57003584A JP 358482 A JP358482 A JP 358482A JP H0480544 B2 JPH0480544 B2 JP H0480544B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57003584A
Other versions
JPS58121679A (en
Inventor
Ryuichi Matsuo
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57003584A priority Critical patent/JPH0480544B2/ja
Publication of JPS58121679A publication Critical patent/JPS58121679A/en
Publication of JPH0480544B2 publication Critical patent/JPH0480544B2/ja
Anticipated expiration legal-status Critical
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11561497&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0480544(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
JP57003584A 1982-01-12 1982-01-12 Expired - Lifetime JPH0480544B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003584A JPH0480544B2 (en) 1982-01-12 1982-01-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003584A JPH0480544B2 (en) 1982-01-12 1982-01-12

Publications (2)

Publication Number Publication Date
JPS58121679A JPS58121679A (en) 1983-07-20
JPH0480544B2 true JPH0480544B2 (en) 1992-12-18

Family

ID=11561497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003584A Expired - Lifetime JPH0480544B2 (en) 1982-01-12 1982-01-12

Country Status (1)

Country Link
JP (1) JPH0480544B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (en) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 The driving method of a semiconductor device and a semiconductor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPH01211979A (en) * 1988-02-19 1989-08-25 Toshiba Corp Nonvoltaile semiconductor memory
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
KR960009995B1 (en) * 1992-07-31 1996-07-25 김광호 Semiconductor device structure and manufacturing method thereof
US5424979A (en) * 1992-10-02 1995-06-13 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell
JP2536413B2 (en) * 1993-06-28 1996-09-18 日本電気株式会社 The method of manufacturing a semiconductor integrated circuit device
JP2573464B2 (en) * 1993-10-12 1997-01-22 株式会社東芝 Nonvolatile semiconductor memory device
JP2885134B2 (en) * 1995-06-15 1999-04-19 日本電気株式会社 A method of manufacturing a semiconductor memory device
JP4605956B2 (en) 2001-09-19 2011-01-05 株式会社リコー A method of manufacturing a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (en) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 The driving method of a semiconductor device and a semiconductor device

Also Published As

Publication number Publication date
JPS58121679A (en) 1983-07-20

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