JPS5789259A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5789259A
JPS5789259A JP16550280A JP16550280A JPS5789259A JP S5789259 A JPS5789259 A JP S5789259A JP 16550280 A JP16550280 A JP 16550280A JP 16550280 A JP16550280 A JP 16550280A JP S5789259 A JPS5789259 A JP S5789259A
Authority
JP
Japan
Prior art keywords
oxide film
gate
silicon
nitride film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16550280A
Other languages
English (en)
Other versions
JPS6130758B2 (ja
Inventor
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16550280A priority Critical patent/JPS5789259A/ja
Publication of JPS5789259A publication Critical patent/JPS5789259A/ja
Publication of JPS6130758B2 publication Critical patent/JPS6130758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
JP16550280A 1980-11-25 1980-11-25 Semiconductor device Granted JPS5789259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16550280A JPS5789259A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16550280A JPS5789259A (en) 1980-11-25 1980-11-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5789259A true JPS5789259A (en) 1982-06-03
JPS6130758B2 JPS6130758B2 (ja) 1986-07-15

Family

ID=15813602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16550280A Granted JPS5789259A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789259A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810861A (ja) * 1981-07-14 1983-01-21 Toshiba Corp 半導体装置およびその製造方法
US20130126923A1 (en) * 2011-11-17 2013-05-23 Episil Technologies Inc. Submount for light emitting diode and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810861A (ja) * 1981-07-14 1983-01-21 Toshiba Corp 半導体装置およびその製造方法
US20130126923A1 (en) * 2011-11-17 2013-05-23 Episil Technologies Inc. Submount for light emitting diode and method for fabricating the same
US8664022B2 (en) * 2011-11-17 2014-03-04 Episil Technologies Inc. Submount for light emitting diode and method for fabricating the same

Also Published As

Publication number Publication date
JPS6130758B2 (ja) 1986-07-15

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