JPS57132365A - Nonvolatile semiconductor memory storage - Google Patents

Nonvolatile semiconductor memory storage

Info

Publication number
JPS57132365A
JPS57132365A JP56018535A JP1853581A JPS57132365A JP S57132365 A JPS57132365 A JP S57132365A JP 56018535 A JP56018535 A JP 56018535A JP 1853581 A JP1853581 A JP 1853581A JP S57132365 A JPS57132365 A JP S57132365A
Authority
JP
Japan
Prior art keywords
gate electrode
single crystal
silicon
electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56018535A
Other languages
Japanese (ja)
Inventor
Kenji Maeguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56018535A priority Critical patent/JPS57132365A/en
Publication of JPS57132365A publication Critical patent/JPS57132365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To improve the reliability and the working efficiency for the subject memory storage by a method wherein a floating gate electrode is constituted by single crystal silicon, and the damage of a control gate electrode is reduced by burying it under a control gate electrode. CONSTITUTION:A single crystal silicon layer 13 is formed on an insulating substrate 11, and the floating gate electrode 13 is formed by performing etching. Then, an oxide film 14 is formed around the electrode 13, single crystal silicon is formed on the substrate 11 and polycrystalline silicon is formed on the oxide film 14 by epitaxially growig silicon on the whole surface of the substrate 11 including the electrode 13. Then, an island type silicon layer is formed by etching, and after the above layer has been turned into P type by injecting boron, oxide films 21 and 22 are formed, polycrystalline silicon films 19 and 20 are deposited, and after phosphorus has been doped, gate electrodes 19 and 20 are formed by etching. Then, a source region 23, a drain region 24 and a source region 25 are formed by injecting N type impurities using the electrodes 19 and 20 as masks.
JP56018535A 1981-02-10 1981-02-10 Nonvolatile semiconductor memory storage Pending JPS57132365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56018535A JPS57132365A (en) 1981-02-10 1981-02-10 Nonvolatile semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018535A JPS57132365A (en) 1981-02-10 1981-02-10 Nonvolatile semiconductor memory storage

Publications (1)

Publication Number Publication Date
JPS57132365A true JPS57132365A (en) 1982-08-16

Family

ID=11974318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018535A Pending JPS57132365A (en) 1981-02-10 1981-02-10 Nonvolatile semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57132365A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
EP0481392A2 (en) * 1990-10-15 1992-04-22 Nec Corporation Semiconductor non-volatile memory device
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5554548A (en) * 1992-03-31 1996-09-10 Sgs-Thomson Microelectronics, Inc. Method of fabricating a one-sided polysilicon thin film transistor
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
EP0481392A2 (en) * 1990-10-15 1992-04-22 Nec Corporation Semiconductor non-volatile memory device
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5554548A (en) * 1992-03-31 1996-09-10 Sgs-Thomson Microelectronics, Inc. Method of fabricating a one-sided polysilicon thin film transistor

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