JPS5785226A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5785226A
JPS5785226A JP16238880A JP16238880A JPS5785226A JP S5785226 A JPS5785226 A JP S5785226A JP 16238880 A JP16238880 A JP 16238880A JP 16238880 A JP16238880 A JP 16238880A JP S5785226 A JPS5785226 A JP S5785226A
Authority
JP
Japan
Prior art keywords
impurities
diffusion layer
high concentration
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16238880A
Other languages
Japanese (ja)
Other versions
JPH0255937B2 (en
Inventor
Kazuo Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16238880A priority Critical patent/JPS5785226A/en
Publication of JPS5785226A publication Critical patent/JPS5785226A/en
Publication of JPH0255937B2 publication Critical patent/JPH0255937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To simplify the opening for taking out an electrode of the diffusion layer by a method wherein a resion of the impurities of high concentration and a region of low concentration of the same conductive type are formed outside of the opening for forming an electrode of the region of the high concentration impurities on a semiconductor substrate. CONSTITUTION:After forming an SiO2 film 3 and the photoresistance 4 and 13 on a semiconductor substrate 1 a hole 17 is opened overlapping a region, whereon a field film oxide is to be formed. Next, the impurities of the same conductive type to a high concentration diffusion layer 6 is introduced by an ions driving-in method. Further an FET of MOS type is completed by a standard silicon gate LOCOS process. Then an impurities diffusion layer 16 is formed by introducing the impurities. And, as the impurities diffusion layer 16 is of the same conductive type to a high concentration impurities layer to become a source, drain and wiring, an alloy layer of Al-Si does not break through the impurities diffusion layer 16, even in case the Al electrode 12 contacts an end of the field film oxide 8.
JP16238880A 1980-11-18 1980-11-18 Manufacture of semiconductor device Granted JPS5785226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16238880A JPS5785226A (en) 1980-11-18 1980-11-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16238880A JPS5785226A (en) 1980-11-18 1980-11-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5785226A true JPS5785226A (en) 1982-05-27
JPH0255937B2 JPH0255937B2 (en) 1990-11-28

Family

ID=15753627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16238880A Granted JPS5785226A (en) 1980-11-18 1980-11-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5785226A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998579A (en) * 1973-01-20 1974-09-18
JPS49123269A (en) * 1973-03-28 1974-11-26
JPS5260571A (en) * 1975-11-13 1977-05-19 Nec Corp Semiconductor device
JPS5538858A (en) * 1978-09-12 1980-03-18 Kanegafuchi Chem Ind Co Ltd Polyvinyl chloride-based resin composition
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998579A (en) * 1973-01-20 1974-09-18
JPS49123269A (en) * 1973-03-28 1974-11-26
JPS5260571A (en) * 1975-11-13 1977-05-19 Nec Corp Semiconductor device
JPS5538858A (en) * 1978-09-12 1980-03-18 Kanegafuchi Chem Ind Co Ltd Polyvinyl chloride-based resin composition
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device

Also Published As

Publication number Publication date
JPH0255937B2 (en) 1990-11-28

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