JPS5780736A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5780736A
JPS5780736A JP55157002A JP15700280A JPS5780736A JP S5780736 A JPS5780736 A JP S5780736A JP 55157002 A JP55157002 A JP 55157002A JP 15700280 A JP15700280 A JP 15700280A JP S5780736 A JPS5780736 A JP S5780736A
Authority
JP
Japan
Prior art keywords
drain
channel
film
type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55157002A
Other languages
Japanese (ja)
Inventor
Kenichi Matsui
Koichi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55157002A priority Critical patent/JPS5780736A/en
Publication of JPS5780736A publication Critical patent/JPS5780736A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the characteristics and the yield of a semiconductor device by covering between N type layers on a P type Si substrate via an insulating layer with an ion shielding layer set at the prescribed potential. CONSTITUTION:An FET having N<+> type source 12 and a drain 13 formed on a P type Si substrate and a drain 16 are isolated by a channel stop 18. The region between the layer 13 and the drain 16 is shielded via an SiO2 film by an aluminum film 19 or the like, and is protected by a CVD SiO2 14 or the like. The predetermined potential which does not invert the channel is applied to the shielding film. According to this structure, the external contamination with the cleaning liquid for removing foreign material during assembling can be shielded by the film 19. Accordingly, the threshold voltage of the channel between the FET and the drain 16 is stabilized, thereby hardly producing inversion of the channel, eliminating the leakage current, and obtaining a semiconductor device having high yield and high reliability.
JP55157002A 1980-11-10 1980-11-10 Semiconductor device Pending JPS5780736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55157002A JPS5780736A (en) 1980-11-10 1980-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55157002A JPS5780736A (en) 1980-11-10 1980-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5780736A true JPS5780736A (en) 1982-05-20

Family

ID=15640033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55157002A Pending JPS5780736A (en) 1980-11-10 1980-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780736A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319908A (en) * 1976-08-09 1978-02-23 Kubota Ltd Controller for feeding and exhausting pressure of air heating furnace
JPS543349A (en) * 1977-06-10 1979-01-11 Sefudaa Kougiyou Kk Floating breakwater
JPS5415669A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of mesa-type semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319908A (en) * 1976-08-09 1978-02-23 Kubota Ltd Controller for feeding and exhausting pressure of air heating furnace
JPS543349A (en) * 1977-06-10 1979-01-11 Sefudaa Kougiyou Kk Floating breakwater
JPS5415669A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of mesa-type semiconductor device

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