JPS5772317A - Manufacture of covering film - Google Patents

Manufacture of covering film

Info

Publication number
JPS5772317A
JPS5772317A JP55149026A JP14902680A JPS5772317A JP S5772317 A JPS5772317 A JP S5772317A JP 55149026 A JP55149026 A JP 55149026A JP 14902680 A JP14902680 A JP 14902680A JP S5772317 A JPS5772317 A JP S5772317A
Authority
JP
Japan
Prior art keywords
covering film
substrates
pair
gravity
oblique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55149026A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325929B2 (cs
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55149026A priority Critical patent/JPS5772317A/ja
Publication of JPS5772317A publication Critical patent/JPS5772317A/ja
Publication of JPH0325929B2 publication Critical patent/JPH0325929B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55149026A 1980-10-24 1980-10-24 Manufacture of covering film Granted JPS5772317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149026A JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149026A JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Publications (2)

Publication Number Publication Date
JPS5772317A true JPS5772317A (en) 1982-05-06
JPH0325929B2 JPH0325929B2 (cs) 1991-04-09

Family

ID=15466039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149026A Granted JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Country Status (1)

Country Link
JP (1) JPS5772317A (cs)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916329A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS59148326A (ja) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Ｃｖｄ薄膜製造方法
JPS6185818A (ja) * 1984-10-04 1986-05-01 Canon Inc 堆積膜形成法
JPS6187320A (ja) * 1984-10-05 1986-05-02 Canon Inc 堆積膜形成法
JPS6190424A (ja) * 1984-10-10 1986-05-08 Canon Inc 堆積膜形成法
JPS61110422A (ja) * 1984-11-05 1986-05-28 Canon Inc 堆積膜形成法
JPS61114515A (ja) * 1984-11-09 1986-06-02 Canon Inc 堆積膜形成法
JPS61190922A (ja) * 1985-02-19 1986-08-25 Canon Inc 堆積膜形成法
JPS6218720A (ja) * 1985-07-18 1987-01-27 Toppan Printing Co Ltd ＺｎＳｅ系化合物半導体の製造方法
JPS62158316A (ja) * 1985-12-28 1987-07-14 Canon Inc 堆積膜形成法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542231A (en) * 1978-09-14 1980-03-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Reduced pressure vapor phase growing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542231A (en) * 1978-09-14 1980-03-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Reduced pressure vapor phase growing device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916329A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS59148326A (ja) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Ｃｖｄ薄膜製造方法
JPS6185818A (ja) * 1984-10-04 1986-05-01 Canon Inc 堆積膜形成法
JPS6187320A (ja) * 1984-10-05 1986-05-02 Canon Inc 堆積膜形成法
JPS6190424A (ja) * 1984-10-10 1986-05-08 Canon Inc 堆積膜形成法
JPS61110422A (ja) * 1984-11-05 1986-05-28 Canon Inc 堆積膜形成法
JPS61114515A (ja) * 1984-11-09 1986-06-02 Canon Inc 堆積膜形成法
JPS61190922A (ja) * 1985-02-19 1986-08-25 Canon Inc 堆積膜形成法
JPS6218720A (ja) * 1985-07-18 1987-01-27 Toppan Printing Co Ltd ＺｎＳｅ系化合物半導体の製造方法
JPS62158316A (ja) * 1985-12-28 1987-07-14 Canon Inc 堆積膜形成法

Also Published As

Publication number Publication date
JPH0325929B2 (cs) 1991-04-09

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