JPS5772317A - Manufacture of covering film - Google Patents

Manufacture of covering film

Info

Publication number
JPS5772317A
JPS5772317A JP55149026A JP14902680A JPS5772317A JP S5772317 A JPS5772317 A JP S5772317A JP 55149026 A JP55149026 A JP 55149026A JP 14902680 A JP14902680 A JP 14902680A JP S5772317 A JPS5772317 A JP S5772317A
Authority
JP
Japan
Prior art keywords
covering film
substrates
pair
gravity
oblique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55149026A
Other languages
Japanese (ja)
Other versions
JPH0325929B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55149026A priority Critical patent/JPS5772317A/en
Publication of JPS5772317A publication Critical patent/JPS5772317A/en
Publication of JPH0325929B2 publication Critical patent/JPH0325929B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase the effective area in a reaction by a method wherein a plurality to pairs of substrates which are contacted on the backside each other are positioned perpendicular or oblique to the direction of the gravity, while a distance is kept between respective pairs. CONSTITUTION:In an atmosphere of plasmanized carrier gas consisting of inert gas or hydrogen reactive gas such as silicate or germanide is introduced, so that reactive gas with larger mass receives electrical energy only. this activation is performed at the position apart from substrates. When the substrate which have the surfaces on which covering film is formed are placed in the reaction oven, the back sides of a pair of the substrates 21, 22 are contacted tightly and the pair is positioned oblique or perpendicular to the direction of the gravity and a plurality of such pair s are positioned so as to keep a distance between respective pairs. With above configuration a semiconductor film is not formed on the opposite side of the covering film forming side and the effective area of the covering film forming can be doubled.
JP55149026A 1980-10-24 1980-10-24 Manufacture of covering film Granted JPS5772317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149026A JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149026A JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Publications (2)

Publication Number Publication Date
JPS5772317A true JPS5772317A (en) 1982-05-06
JPH0325929B2 JPH0325929B2 (en) 1991-04-09

Family

ID=15466039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149026A Granted JPS5772317A (en) 1980-10-24 1980-10-24 Manufacture of covering film

Country Status (1)

Country Link
JP (1) JPS5772317A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916329A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPS59148326A (en) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Fabrication of thin film by cvd method
JPS6185818A (en) * 1984-10-04 1986-05-01 Canon Inc Deposition film forming method
JPS6187320A (en) * 1984-10-05 1986-05-02 Canon Inc Formation of deposition film
JPS6190424A (en) * 1984-10-10 1986-05-08 Canon Inc Formation of deposited film
JPS61110422A (en) * 1984-11-05 1986-05-28 Canon Inc Method of forming deposited film
JPS61114515A (en) * 1984-11-09 1986-06-02 Canon Inc Formation of deposited film
JPS61190922A (en) * 1985-02-19 1986-08-25 Canon Inc Formation of deposited film
JPS6218720A (en) * 1985-07-18 1987-01-27 Toppan Printing Co Ltd Manufacture of znse compound semiconductor
JPS62158316A (en) * 1985-12-28 1987-07-14 Canon Inc Preparation of multilayer structure film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542231A (en) * 1978-09-14 1980-03-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Reduced pressure vapor phase growing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542231A (en) * 1978-09-14 1980-03-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Reduced pressure vapor phase growing device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916329A (en) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd Plasma vapor reaction device
JPH0522375B2 (en) * 1982-07-19 1993-03-29 Handotai Energy Kenkyusho
JPS59148326A (en) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Fabrication of thin film by cvd method
JPS6185818A (en) * 1984-10-04 1986-05-01 Canon Inc Deposition film forming method
JPS6187320A (en) * 1984-10-05 1986-05-02 Canon Inc Formation of deposition film
JPS6190424A (en) * 1984-10-10 1986-05-08 Canon Inc Formation of deposited film
JPS61110422A (en) * 1984-11-05 1986-05-28 Canon Inc Method of forming deposited film
JPS61114515A (en) * 1984-11-09 1986-06-02 Canon Inc Formation of deposited film
JPS61190922A (en) * 1985-02-19 1986-08-25 Canon Inc Formation of deposited film
JPH0834181B2 (en) * 1985-02-19 1996-03-29 キヤノン株式会社 Deposited film formation method
JPS6218720A (en) * 1985-07-18 1987-01-27 Toppan Printing Co Ltd Manufacture of znse compound semiconductor
JPS62158316A (en) * 1985-12-28 1987-07-14 Canon Inc Preparation of multilayer structure film

Also Published As

Publication number Publication date
JPH0325929B2 (en) 1991-04-09

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