JPS5512727A - Semiconductor wafer for diode or rectifier cell - Google Patents
Semiconductor wafer for diode or rectifier cellInfo
- Publication number
- JPS5512727A JPS5512727A JP8507978A JP8507978A JPS5512727A JP S5512727 A JPS5512727 A JP S5512727A JP 8507978 A JP8507978 A JP 8507978A JP 8507978 A JP8507978 A JP 8507978A JP S5512727 A JPS5512727 A JP S5512727A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- layers
- substrate
- metal layer
- rectifier cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Abstract
PURPOSE: To arrange solder layers greater in thickness as well as volume uniformly over the whole area of both surfaces of a metal layer by providing with the solder layers produced by applying solder in the form of a foil and making it liquefied and solidified on the metal layer.
CONSTITUTION: The silicon wafer for a rectifier cell consists of: a phosphorated N-type silicon substrate 1; a P-type semiconductor 2 formed by diffusing boron on one of the surfaces of the substrate 1; a N+-type semiconductor 3 formed by diffusing phosphorus in high concentration over the other side of the surface of the substrate 1; nickel layers 4 and 5 of which 0.5mm in width of their peripheries are removed by the photoetching or acid-resisting wax-mask method with a nitric acid solution after the layers have been formed on both sides by the electrolytic plating method; and solder layers 6 and 7 formed by placing a solder foil with 50-80μ in thickness on both surfaces of the metal layer, and by heating it at about 50°C higher than its melting point, then cooling it. In addition, the areas 8 and 9 exposing the semiconductor substrate are left in the peripheral area of the wafer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8507978A JPS5512727A (en) | 1978-07-14 | 1978-07-14 | Semiconductor wafer for diode or rectifier cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8507978A JPS5512727A (en) | 1978-07-14 | 1978-07-14 | Semiconductor wafer for diode or rectifier cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5512727A true JPS5512727A (en) | 1980-01-29 |
Family
ID=13848603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8507978A Pending JPS5512727A (en) | 1978-07-14 | 1978-07-14 | Semiconductor wafer for diode or rectifier cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5512727A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187935A (en) * | 1988-01-22 | 1989-07-27 | Mitsubishi Electric Corp | Semiconductor device |
| WO2013113930A1 (en) | 2012-02-03 | 2013-08-08 | Dsm Ip Assets B.V. | Block copolymer, process and composition |
-
1978
- 1978-07-14 JP JP8507978A patent/JPS5512727A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187935A (en) * | 1988-01-22 | 1989-07-27 | Mitsubishi Electric Corp | Semiconductor device |
| WO2013113930A1 (en) | 2012-02-03 | 2013-08-08 | Dsm Ip Assets B.V. | Block copolymer, process and composition |
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