JPS5767009A - Formation of film - Google Patents

Formation of film

Info

Publication number
JPS5767009A
JPS5767009A JP13845380A JP13845380A JPS5767009A JP S5767009 A JPS5767009 A JP S5767009A JP 13845380 A JP13845380 A JP 13845380A JP 13845380 A JP13845380 A JP 13845380A JP S5767009 A JPS5767009 A JP S5767009A
Authority
JP
Japan
Prior art keywords
substrate
activated
nitride
contact
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13845380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355401B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP13845380A priority Critical patent/JPS5767009A/ja
Publication of JPS5767009A publication Critical patent/JPS5767009A/ja
Publication of JPH0355401B2 publication Critical patent/JPH0355401B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP13845380A 1980-10-02 1980-10-02 Formation of film Granted JPS5767009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13845380A JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13845380A JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Publications (2)

Publication Number Publication Date
JPS5767009A true JPS5767009A (en) 1982-04-23
JPH0355401B2 JPH0355401B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-23

Family

ID=15222359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13845380A Granted JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Country Status (1)

Country Link
JP (1) JPS5767009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934639A (ja) * 1982-08-21 1984-02-25 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS5986228A (ja) * 1982-11-10 1984-05-18 Toshiba Corp 窒化膜生成方法
JPS59169143A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 窒化膜生成装置
JP2003297822A (ja) * 2002-03-29 2003-10-17 Tokyo Electron Ltd 絶縁膜の形成方法
JP2007110144A (ja) * 2006-11-20 2007-04-26 Tokyo Electron Ltd 絶縁膜の形成方法
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
JPS5423379A (en) * 1977-07-22 1979-02-21 Fujitsu Ltd Formation of insulating film on semiconductor surface
JPS55120143A (en) * 1979-03-09 1980-09-16 Fujitsu Ltd Method of forming semiconductor surface insulating film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
JPS5423379A (en) * 1977-07-22 1979-02-21 Fujitsu Ltd Formation of insulating film on semiconductor surface
JPS55120143A (en) * 1979-03-09 1980-09-16 Fujitsu Ltd Method of forming semiconductor surface insulating film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934639A (ja) * 1982-08-21 1984-02-25 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS5986228A (ja) * 1982-11-10 1984-05-18 Toshiba Corp 窒化膜生成方法
JPS59169143A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 窒化膜生成装置
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
JP2003297822A (ja) * 2002-03-29 2003-10-17 Tokyo Electron Ltd 絶縁膜の形成方法
US7446052B2 (en) 2002-03-29 2008-11-04 Tokyo Electron Limited Method for forming insulation film
US7662236B2 (en) 2002-03-29 2010-02-16 Tokyo Electron Limited Method for forming insulation film
JP2007110144A (ja) * 2006-11-20 2007-04-26 Tokyo Electron Ltd 絶縁膜の形成方法

Also Published As

Publication number Publication date
JPH0355401B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-23

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