JPS5767009A - Formation of film - Google Patents
Formation of filmInfo
- Publication number
- JPS5767009A JPS5767009A JP13845380A JP13845380A JPS5767009A JP S5767009 A JPS5767009 A JP S5767009A JP 13845380 A JP13845380 A JP 13845380A JP 13845380 A JP13845380 A JP 13845380A JP S5767009 A JPS5767009 A JP S5767009A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- activated
- nitride
- contact
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13845380A JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13845380A JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5767009A true JPS5767009A (en) | 1982-04-23 |
JPH0355401B2 JPH0355401B2 (ja) | 1991-08-23 |
Family
ID=15222359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13845380A Granted JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5767009A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5934639A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 窒化シリコン膜形成装置 |
JPS5986228A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | 窒化膜生成方法 |
JPS59169143A (ja) * | 1983-03-16 | 1984-09-25 | Toshiba Corp | 窒化膜生成装置 |
EP0227839A1 (en) * | 1985-07-02 | 1987-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a thin film |
JP2003297822A (ja) * | 2002-03-29 | 2003-10-17 | Tokyo Electron Ltd | 絶縁膜の形成方法 |
JP2007110144A (ja) * | 2006-11-20 | 2007-04-26 | Tokyo Electron Ltd | 絶縁膜の形成方法 |
US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
JPS5423379A (en) * | 1977-07-22 | 1979-02-21 | Fujitsu Ltd | Formation of insulating film on semiconductor surface |
JPS55120143A (en) * | 1979-03-09 | 1980-09-16 | Fujitsu Ltd | Method of forming semiconductor surface insulating film |
-
1980
- 1980-10-02 JP JP13845380A patent/JPS5767009A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
JPS5423379A (en) * | 1977-07-22 | 1979-02-21 | Fujitsu Ltd | Formation of insulating film on semiconductor surface |
JPS55120143A (en) * | 1979-03-09 | 1980-09-16 | Fujitsu Ltd | Method of forming semiconductor surface insulating film |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5934639A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 窒化シリコン膜形成装置 |
JPS5986228A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | 窒化膜生成方法 |
JPS59169143A (ja) * | 1983-03-16 | 1984-09-25 | Toshiba Corp | 窒化膜生成装置 |
EP0227839A1 (en) * | 1985-07-02 | 1987-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a thin film |
US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
JP2003297822A (ja) * | 2002-03-29 | 2003-10-17 | Tokyo Electron Ltd | 絶縁膜の形成方法 |
US7446052B2 (en) | 2002-03-29 | 2008-11-04 | Tokyo Electron Limited | Method for forming insulation film |
US7662236B2 (en) | 2002-03-29 | 2010-02-16 | Tokyo Electron Limited | Method for forming insulation film |
JP2007110144A (ja) * | 2006-11-20 | 2007-04-26 | Tokyo Electron Ltd | 絶縁膜の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0355401B2 (ja) | 1991-08-23 |
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