JPH0355401B2 - - Google Patents

Info

Publication number
JPH0355401B2
JPH0355401B2 JP55138453A JP13845380A JPH0355401B2 JP H0355401 B2 JPH0355401 B2 JP H0355401B2 JP 55138453 A JP55138453 A JP 55138453A JP 13845380 A JP13845380 A JP 13845380A JP H0355401 B2 JPH0355401 B2 JP H0355401B2
Authority
JP
Japan
Prior art keywords
substrate
film
gas
hydrogen
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55138453A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5767009A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13845380A priority Critical patent/JPS5767009A/ja
Publication of JPS5767009A publication Critical patent/JPS5767009A/ja
Publication of JPH0355401B2 publication Critical patent/JPH0355401B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP13845380A 1980-10-02 1980-10-02 Formation of film Granted JPS5767009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13845380A JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13845380A JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Publications (2)

Publication Number Publication Date
JPS5767009A JPS5767009A (en) 1982-04-23
JPH0355401B2 true JPH0355401B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-23

Family

ID=15222359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13845380A Granted JPS5767009A (en) 1980-10-02 1980-10-02 Formation of film

Country Status (1)

Country Link
JP (1) JPS5767009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934639A (ja) * 1982-08-21 1984-02-25 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS5986228A (ja) * 1982-11-10 1984-05-18 Toshiba Corp 窒化膜生成方法
JPS59169143A (ja) * 1983-03-16 1984-09-25 Toshiba Corp 窒化膜生成装置
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
JP4001498B2 (ja) 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
JP4361078B2 (ja) * 2006-11-20 2009-11-11 東京エレクトロン株式会社 絶縁膜の形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
JPS5423379A (en) * 1977-07-22 1979-02-21 Fujitsu Ltd Formation of insulating film on semiconductor surface
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法

Also Published As

Publication number Publication date
JPS5767009A (en) 1982-04-23

Similar Documents

Publication Publication Date Title
KR100236626B1 (ko) 금속막을 선택적으로 피착하는 방법
US5376223A (en) Plasma etch process
CA2192630C (en) Fabrication process and fabrication apparatus of soi substrate
US5412246A (en) Low temperature plasma oxidation process
JP2687966B2 (ja) 半導体装置の製造方法
US20070218687A1 (en) Process for producing materials for electronic device
JP2009501440A (ja) 厚い絶縁層の粗さを減少させるための方法
JP2004508709A (ja) 酸化物の選択的エッチング方法
KR102832041B1 (ko) 산화물 박막의 제조 방법
JPH04120732A (ja) 固体素子及びその製造方法
JPH11162962A (ja) 絶縁膜の製造方法
JPH08293483A (ja) ガスクラスターイオンビームによる固体表面の 平坦化方法
US5567658A (en) Method for minimizing peeling at the surface of spin-on glasses
JPH0355401B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2646811B2 (ja) ドライエッチング方法
US5133830A (en) Method of pretreatment and anisotropic dry etching of thin film semiconductors
JP3086234B2 (ja) 表面処理方法
CN111424259B (zh) 高密度等离子体化学气相沉积制程形成氧化硅层的方法
JPS6029296B2 (ja) 被膜形成方法
JP4141021B2 (ja) プラズマ成膜方法
JP3488383B2 (ja) ドライエッチング用石英ガラス部材およびそれを装着したドライエッチング装置
JPH0586479A (ja) Ｅｃｒプラズマｃｖｄによる成膜方法
KR100329787B1 (ko) 반도체 소자의 감광막 제거방법
KR100372750B1 (ko) 표면 및 결합특성이 향상된 질화알루미늄(ａｉｎ) 박막의 제조방법
JP2742381B2 (ja) 絶縁膜の形成方法