JPS5756958A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5756958A JPS5756958A JP55132146A JP13214680A JPS5756958A JP S5756958 A JPS5756958 A JP S5756958A JP 55132146 A JP55132146 A JP 55132146A JP 13214680 A JP13214680 A JP 13214680A JP S5756958 A JPS5756958 A JP S5756958A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- film
- layer
- insulating film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 229920005591 polysilicon Polymers 0.000 abstract 5
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55132146A JPS5756958A (en) | 1980-09-22 | 1980-09-22 | Semiconductor device |
DE8181304319T DE3173506D1 (en) | 1980-09-22 | 1981-09-21 | Semiconductor device and its manufacture |
EP81304319A EP0048610B1 (de) | 1980-09-22 | 1981-09-21 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
US06/814,295 US4673969A (en) | 1980-09-22 | 1985-12-30 | Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55132146A JPS5756958A (en) | 1980-09-22 | 1980-09-22 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5756958A true JPS5756958A (en) | 1982-04-05 |
JPS6329832B2 JPS6329832B2 (de) | 1988-06-15 |
Family
ID=15074424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55132146A Granted JPS5756958A (en) | 1980-09-22 | 1980-09-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5756958A (de) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871652A (ja) * | 1981-10-26 | 1983-04-28 | Hitachi Ltd | 半導体記憶装置 |
JPS58191462A (ja) * | 1982-05-04 | 1983-11-08 | Nec Corp | 半導体装置 |
JPS594160A (ja) * | 1982-06-21 | 1984-01-10 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | スタテイツクramセル |
JPS604252A (ja) * | 1983-06-22 | 1985-01-10 | Nec Corp | 半導体集積回路記憶装置 |
US4528582A (en) * | 1983-09-21 | 1985-07-09 | General Electric Company | Interconnection structure for polycrystalline silicon resistor and methods of making same |
US4604641A (en) * | 1981-11-30 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JPS6387763A (ja) * | 1987-08-13 | 1988-04-19 | Nec Corp | 半導体集積回路メモリ |
JPS6422046A (en) * | 1987-07-17 | 1989-01-25 | Sony Corp | Semiconductor and manufacture thereof |
US4961104A (en) * | 1987-04-24 | 1990-10-02 | Nec Corporation | Multi-level wiring structure of semiconductor device |
US6667537B1 (en) * | 1997-10-27 | 2003-12-23 | Seiko Epson Corporation | Semiconductor devices including resistance elements and fuse elements |
US6696733B2 (en) | 1997-10-27 | 2004-02-24 | Seiko Epson Corporation | Semiconductor devices including electrode structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0378925A (ja) * | 1989-08-22 | 1991-04-04 | Meidensha Corp | ガス負荷開閉器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106693A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Integrated circuit |
JPS55120150A (en) * | 1979-03-09 | 1980-09-16 | Toshiba Corp | Semiconductor device |
-
1980
- 1980-09-22 JP JP55132146A patent/JPS5756958A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106693A (en) * | 1976-03-05 | 1977-09-07 | Hitachi Ltd | Integrated circuit |
JPS55120150A (en) * | 1979-03-09 | 1980-09-16 | Toshiba Corp | Semiconductor device |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871652A (ja) * | 1981-10-26 | 1983-04-28 | Hitachi Ltd | 半導体記憶装置 |
US4604641A (en) * | 1981-11-30 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JPS58191462A (ja) * | 1982-05-04 | 1983-11-08 | Nec Corp | 半導体装置 |
JPS594160A (ja) * | 1982-06-21 | 1984-01-10 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | スタテイツクramセル |
JPH0436468B2 (de) * | 1982-06-21 | 1992-06-16 | Fueachairudo Kamera Endo Insutsurumento Corp | |
JPS604252A (ja) * | 1983-06-22 | 1985-01-10 | Nec Corp | 半導体集積回路記憶装置 |
US4528582A (en) * | 1983-09-21 | 1985-07-09 | General Electric Company | Interconnection structure for polycrystalline silicon resistor and methods of making same |
US4961104A (en) * | 1987-04-24 | 1990-10-02 | Nec Corporation | Multi-level wiring structure of semiconductor device |
JPS6422046A (en) * | 1987-07-17 | 1989-01-25 | Sony Corp | Semiconductor and manufacture thereof |
JPS6387763A (ja) * | 1987-08-13 | 1988-04-19 | Nec Corp | 半導体集積回路メモリ |
US6667537B1 (en) * | 1997-10-27 | 2003-12-23 | Seiko Epson Corporation | Semiconductor devices including resistance elements and fuse elements |
US6696733B2 (en) | 1997-10-27 | 2004-02-24 | Seiko Epson Corporation | Semiconductor devices including electrode structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6329832B2 (de) | 1988-06-15 |
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